Philippe Fauchet

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List of Publications (PDF)

“Ultrafast Photoluminescence Dynamics Of Nitride Passivated Silicon Nanocrystals Using The Variable Stripe Length Technique,” H. Chen, J. H. Shin, P. M. Fauchet, J.-H. Shin and G. Y. Sung, to appear in Appl. Phys. Lett.

“Biodetection Using Silicon Photonic Bandgap Structures,” P. M. Fauchet, B. L. Miller, L. A. DeLouise, M. R. Lee, and H. Ouyang, to appear in Biophotonics, L. Pavesi editor.

“Dielectric Constant Reduction In Silicon Nanostructures,” H. G. Yoo and P. M. Fauchet, submitted for publication (07/07).

“Porous Silicon Optical Label-Free Biosensors,” H. Ouyang and P.M. Fauchet, to appear in Device Applications of Silicon Nanocrystals and Nanostructures, N. Koshida editor, Springer (2007).

“Closed-Form Model Of A Capacitor-Based Electro-Optic Modulator,” M. Haurylau, J. Zhang, H. Chen, G. Chen, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, submitted for publication (02/06).

“Porous Silicon Electrical And Optical Biosensors,” H. Ouyang, M. Archer, and P.M. Fauchet, to appear in Surface Nanophotonics: Principles and Applications, D. Andrews and Z. Gaburro, editors, Springer (2007).

370. “Anisotropic Nonlinear Response Of Silicon In The Near-Infrared Region,” J. Zhang, Q. Lin, G. Piredda, R. W. Boyd, G. P. Agrawal, and P. M. Fauchet, Appl. Phys. Lett. 91, 071113 (2007).

369. “Dispersion Of Silicon Nonlinearities In The Near Infrared Region,” Q. Lin, J. Zhang, G. Piredda, R. W. Boyd, P. M. Fauchet, and G. P. Agrawal, Appl. Phys. Lett. 91, 021111 (2007).

368. “Optical Soliton In A Silicon Waveguide,” J. Zhang, Q. Lin, G. Piredda, R. W. Boyd, G. P. Agrawal, and P. M. Fauchet, Opt. Express 15, 7682-7688 (2007).

367. “Photochemical Etching Of Silicon By Two-Photon Absorption,” H. Ouyang, Y. Deng, W. H. Knox, and P. M. Fauchet, Phys. Stat. Sol. (a) 204, 1255-1259 (2007).

366. “Predictions Of CMOS Compatible On-Chip Optical Interconnect,” G. Chen, H. Chen, M. Haurylau, N. A. Nelson, D. H. Albonesi, P. M. Fauchet, and E. G. Friedman, Integration- The VLSI Journal 40, 434-446 (2007).

365. “Solvent Detection And Water Monitoring With A Macroporous Silicon Field-Effect Sensor,” J. P. Clarkson, P. M. Fauchet, V. Rajalingam, and K. D. Hirschman, IEEE Sensors Journ. 7, 329-335 (2007).

364. “Betavoltaic And Photovoltaic Energy Conversion In Three-Dimensional Macroporous Silicon Diodes,” J. P. Clarkson, W. Sun, K. D. Hirschman, L. L. Gadeken and P. M. Fauchet, Phys. Stat. Sol. (a) 204, 1536-1540 (2007).

363. “Porous Silicon As A Cell Interface For Bone Tissue Engineering,” W. Sun, J. E. Puzas, T.- J. Sheu, and P. M. Fauchet, Phys. Stat. Sol. (a) 204, 1429-1433 (2007).

362. “Nano-To Microscale Porous Silicon As A Cell Interface For Bone-Tissue Engineering,” W. Sun, J. E. Puzas, T.- J. Sheu, X. Liu, and P. M. Fauchet, Adv. Mater. 19, 921-924 (2007).

361. “Hybrid Photonic Crystal Microcavity Switches On SOI,” S. P. Anderson, M. Haurylau, J. Zhang, and P. M. Fauchet, in Silicon Photonics II, J. A. Kubby and G. T. Reed, editors, Proc. SPIE (SPIE, Bellingham, WA, 2007), Vol. 6477, pp 647712  1-8 (2007).

360. “Two-Dimensional Silicon Photonic Crystal Based Biosensing Platform For Protein Detection,” M. Lee and P. M. Fauchet, Opt. Express 15, 4530-4535 (2007).

359. “Label-Free Quantitative Detection Of Protein Using Macroporous Silicon Photonic Bandgap Biosensors,” H. Ouyang, L. A. DeLouise, B. L. Miller, and P. M. Fauchet, Anal. Chem. 79, 1502-1506 (2007).

358. “Charge- And Size-Based Separation Of Macromolecules Using Ultrathin Silicon Membranes,” C. C. Striemer, T. R. Gaborksi, J. L. McGrath, and P. M. Fauchet, Nature 445, 749-753 (2007).

357. “Tunable Silicon-Based Light Sources Using Erbium Doped Liquid Crystals,” S. M. Weiss, J. Zhang, P. M. Fauchet, V. V. Seregin, and J. L. Coffer, Appl. Phys. Lett. 90, 031112 (2007).

356. “On-Chip Optical Interconnect Roadmap: Challenges And Critical Directions,” M. Haurylau, G. Chen, H. Chen, J. Zhang, N. A. Nelson, D. H. Albonesi, E. G. Friedman, and P. M. Fauchet, IEEE Journ. Selected Topics in Quantum Electron. 12, 1699-1705 (2006).

355. “Electrically Tunable Silicon 2-D Photonic Bandgap Structures,” M. Haurylau, S. P. Anderson, K. L. Marshall, and P. M. Fauchet, IEEE Journ. Selected Topics in Quantum Electron. 12, 1527-1533 (2006).

354. “Porous Silicon One-Dimensional Photonic Crystals For Optical Signal Modulation,” S. M. Weiss and P. M. Fauchet, IEEE Journ. Selected Topics in Quantum Electron. 12, 1514-1519 (2006).

353. “Active Building Blocks For Silicon Photonic Devices,” S. M. Weiss and P. M. Fauchet, in Nanophotonics for Communication: Materials and Devices II, N. K. Dhar, A. K. Dutta, and K. Asakawa, editors, Proc. SPIE (SPIE, Bellingham, WA, 2005), Vol. 6017, pp 85-94 (2005) (Invited).

352. “Nonlinear Optical Response Of Photonic Bandgap Structures Containing PbSe Quantum Dots,” M. Haurylau, J, Zhang, S. M. Weiss, P. M. Fauchet, D. V. Martyshkin, V. I. Rupasov, and S. G. Krivoshlykov, Journ. Photochemistry and Photobiology A: Chemistry 183, 329-333 (2006).

351. “Ultrabroadband Parametric Generation And Wavelength Conversion In Silicon Waveguides,” Q. Lin, J. Zhang, P. M. Fauchet, and G. P. Agrawal, Opt. Express 14, 4786-4799 (2006).

350. “Quantitative Analysis Of The Sensitivity Of Porous Silicon Optical Biosensors,” H. Ouyang, C. C. Striemer, and P. M. Fauchet, Appl. Phys. Lett. 88, 163108 (2006).

349. “Electrical Modulation Of Silicon-Based Two-Dimensional Photonic Bandgap Structures,” M. Haurylau, S. P. Anderson, K. L. Marshall, and P. M. Fauchet, Appl. Phys. Lett. 88, 061103 (2006).

348. “Biosensing Using Porous Silicon Photonic Bandgap Structures,” H. Ouyang and P. M. Fauchet, in Photonic Crystals and Photonic Crystal Fibers for Sensing Applications, H. H. Du editor (SPIE, Bellingham, WA, 2005) pp 600508 1-15 (Invited).

347. “Macroporous Silicon Sensor Arrays For Chemical And Biological Detection,” J. P. Clarkson, V. Rajalingam, K. D. Hirschman, H. Ouyang, W. Sun, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 869, D321-D326 (2005).

346. “Macroporous Silicon Microcavities For Macromolecule Detection,” H. Ouyang, M. Christophersen, R. Viard, B. L. Miller, and P. M. Fauchet, Adv. Funct. Mater. 15, 1851-1859 (2005).

345. “Silicon Photonic Bandgap Biosensors,” H. Ouyang, M. Lee, B. L. Miller, and P. M. Fauchet, in Tuning the Optical Response of Photonic Bandgap Structures II, P. M. Fauchet and P. V. Braun editors (SPIE, Bellingham, WA, 2005) pp 59260J 1-11.

344. “Electrical Tuning Of Silicon-Based 2-D Photonic Bandgap Structures,” M. Haurylau, S. P. Anderson, K. L. Marshall, and P. M. Fauchet, in Tuning the Optical Response of Photonic Bandgap Structures II, P. M. Fauchet and P. V. Braun editors (SPIE, Bellingham, WA, 2005) pp 592603 1-12.

343. “Harvesting Betavoltaic And Photovoltaic Energy With Three Dimensional Porous Silicon Diodes,” W. Sun, N. P. Kherani, K. D. Hirschman, L. L. Gadeken, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 836, 285-290 (2005).

342. “Hydrogel-Supported Optical-Microcavity Sensors,” L. A. Delouise, P. M. Fauchet, B. L. Miller, and A. A. Pentland, Adv. Mater. 17, 2203-2206 (2005).

341. “Thermal Tuning Of Silicon-Based One-Dimensional Photonic Bandgap Structures,” S. M. Weiss and P. M. Fauchet, Phys. Stat. Sol. (c) 2, 3278 (2005).

340. “Optical Properties And Tunability Of Macroporous Silicon 2-D Photonic Bandgap Structures,” M. Haurylau, A. R. Shroff, and P. M. Fauchet, Phys. Stat. Sol. (a) 202, 1477-1481 (2005).

339. “Enhanced Control Of Porous Silicon Morphology From Macropore To Mesopore Formation,” H. Ouyang, M. Christophersen, and P. M. Fauchet, Phys. Stat. Sol. (a) 202, 1396-1401 (2005).

338. “Charge Transport In Silicon Nanocrystal Arrays,” R. Krishnan, Q. Xie, J. Kulik, X. D. Wang, T. D. Krauss, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 832, 201-206 (2005).

337. “Optical Sensor Based On Resonant Porous Silicon Structures,” J. J. Saarinen, S. M. Weiss, P. M. Fauchet, and J. E. Sipe, Opt. Express 13, 3754-3764 (2005).

336. “A Three Dimensional Porous Silicon p-n Diode For Betavoltaics And Photovoltaics,” W. Sun, N. P. Kherani, K. D. Hirschman, L. L. Gadeken, and P. M. Fauchet, Adv. Mater. 17, 1230-1233 (2005).

335. “Electrical Porous Silicon Chemical Sensor For Detection Of Organic Solvents,” M. Archer, M. Christophersen, and P. M. Fauchet, Sensor. Actuat. B-Chem 106, 347-357 (2005).

334. “Predictions Of CMOS Compatible On-Chip Optical Interconnect,” G. Chen, H. Chen, M. Haurylau, N. Nelson, P. M. Fauchet, E. G. Friedman, and D. Albonesi, Proceedings of the 2005 International Workshop on System Level Interconnect Prediction (ACM Press, 2005), pp 13-20.

333. “Electrical And Thermal Modulation Of Silicon Photonic Bandgap Microcavities Containing Liquid Crystals,” S. M. Weiss, H. Ouyang, J. Zhang, and P. M. Fauchet, Opt. Express 13, 1090-1097 (2005).

332. “Optical Gain In Different Silicon Nanocrystal Systems,” P. M. Fauchet, J. Ruan, H. Chen, L. Pavesi, L. Dal Negro, M. Cazzaneli, R. G. Elliman, N. Smith, M. Samoc, and B. Luther-Davies, Optical Materials 27, 745-749 (2005).

331. “Tunable Photonic Bandgap Structures For Optical Interconnects,” S. M. Weiss, M. Haurylau, and P. M. Fauchet, Optical Materials 27, 740-744 (2005).

330. “Light Emission From Si Quantum Dots,” P. M. Fauchet, Materials Today, January 2005, pp 26-33 (Invited).

329. “Integrated Sensor Array With A Configurable Network Interface For Chemical And Biological Detection,” K. D. Hirschman, M. Archer, D. Presaud, V. Rajalingam, J. Clarkson, J. Mann, D. Phillips, W. Sun, and P. M. Fauchet, in Lab-on-a-Chip: Platforms, Devices, and Applications, L. A. Smith and D. Sobek editors (SPIE, Bellingham, WA, 2004), pp 205-212.

328. “Control And Elimination Of The Effect Of Ambient Temperature Fluctuations On Photonic Bandgap Device Operation,” S. M. Weiss, M. Lee, M. Molinari, H. Ouyang, and P. M. Fauchet, in Tuning the Optical Response of Photonic Bandgap Structures, P. M. Fauchet and P. V. Braun editors (SPIE, Bellingham, WA, 2004) pp 144-155 (Invited).

327. “Biosensing With One Dimensional Photonic Bandgap Structure,” H. Ouyang, L. A. DeLouise, M. Christophersen, B. L. Miller, and P. M. Fauchet, in Tuning the Optical Response of Photonic Bandgap Structures, P. M. Fauchet and P. V. Braun editors (SPIE, Bellingham, WA, 2004) pp 71-80.

326. “Dynamically Tunable 1D And 2D Photonic Bandgap Structures For Optical Interconnect Applications,” M. Haurylau, S. M. Weiss, and P. M. Fauchet, in Tuning the Optical Response of Photonic Bandgap Structures, P. M. Fauchet and P. V. Braun editors (SPIE, Bellingham, WA, 2004) pp 38-49.

325. “The Development Of Nanocrystalline Silicon For Emerging Microelectronic And Nanoelectronic Applications,” C. C. Striemer, R. Krishnan, and P. M. Fauchet, Journal of Materials 56 (10), pp 20-25 (2004).

324. “Macroporous Silicon Electrical Sensor For DNA Hybridization Detection,” M. Archer, M. Christophersen, and P. M. Fauchet, Biomedical Microdevices 6, 203-211 (2004).

323. “Polarization Surface-Charge Density of Single Semiconductor Quantum Rods,” R. Krishnan, M. A. Hahn, Z. Yu, J. Silcox, P. M. Fauchet, and T. D. Krauss, Phys. Rev. Lett. 92, art. 216803 (2004).

322. “Electrical Porous Silicon Microarray For DNA Hybridization Detection,” M. Archer, M. Chirstophersen, P. M. Fauchet, D. Persaud, and K. D. Hirschman, Mat. Res. Soc. Symp. Proc. 782, 385-391 (2004).

321. “Monolithic Silicon Light Sources,” P. M. Fauchet, in Silicon Photonics, L. Pavesi and D. J. Lockwood editors (Topics in Applied Physics 94, Springer, 2004) pp 177-198 (Invited)

320. “Effect Of Oxidation On Charge Localization And Transport In A Single Layer Of Silicon Nanocrystals,” R. Krishnan, Q. Xie, J. Kulik, X. D. Wang, S. Lu, M. Molinari, Y. Gao, T. D. Krauss, and P. M. Fauchet, J. Appl. Phys. 96, 654-660 (2004).

319. “Biosensor Applications: Porous Silicon Microcavities,” B. L. Miller, P. M. Fauchet, S. R. Horner, and S. Chan, in the Encyclopedia of Nanoscience and Nanotechnology J. A. Schwarz, C. I. Contescu, and K. Putyera editors (Marcel Dekker, New York, 2004) pp 343-350 (Invited).

318. “Stimulated Emission In Nanocrystalline Silicon Superlattices,” J. Ruan, P. M. Fauchet, L. Dal Negro, M. Cazzaneli, and L. Pavesi, Appl. Phys. Lett. 83, 5479-5481 (2003).

317. “Temperature Stability For Silicon-Based Photonic Bandgap Structures,” S. M. Weiss, M. Molinari, and P. M. Fauchet, Appl. Phys. Lett. 83, 1980-1982 (2003).

316. “Electrical Sensing Of DNA Hybridization In Porous Silicon Layers,” M. Archer and P. M. Fauchet, Phys. Stat. Sol. (a) 198, 503-507 (2003).

315. “Electrically Tunable Porous Silicon Active Mirrors,” S. M. Weiss and P. M. Fauchet, Phys. Stat. Sol. (a) 197, 556-560 (2003).

314. “Dynamic Etching Of Silicon For Solar Cell Applications,” C. C. Striemer and P. M. Fauchet, Phys. Stat. Sol. (a) 197, 502-506 (2003).

313. “The Role Of Nanoscale Silicon In Optical Interconnects,” P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 737, 789-799 (2003) (Invited).

312. “Exploiting Silicon Porosity Gradients For Superior Antireflective Films,” C. C. Striemer and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 737, 661-666 (2003).

311. “Porous Silicon Electrical Biosensors,” M. Archer, M. Christophersen, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 737, 549-554 (2003).

310. “Tunable Porous Silicon Mirrors For Optoelectronic Applications,” S. M. Weiss, M. Haurylau, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 737, 529-534 (2003).

309. “Periodic Two-Dimensional Arrays Of Silicon Quantum Dots For Nanoscale Device Applications,” C. C. Striemer, R. Krishnan, Q. Xie, L. Tsybeskov, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 737, 431-436 (2003).

308. “Optical Amplification In Nanocrystalline Silicon Superlattices,” J. Ruan, H. Chen, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 737, 407-412 (2003).

307. “Charge Retention In Single Silicon Nanocrystals Layers,” R. Krishnan, T. D. Krauss, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 737, 253-258 (2003).

306. “Optical Amplification In Nanocrystalline Silicon Superlattices,” P. M. Fauchet and J. Ruan, in Towards the First Silicon Laser, edited by L. Pavesi, S. Gaponenko, and L. Dal Negro (Kluwer Academic Publishers, Dordrecht, 2003), pp 197-208.

305. “Photocarrier Drift-Mobility Measurements And Electron Localization In Nanoporous Silicon,” P. N. Rao, E. A. Schiff, L. Tsybeskov, and P. Fauchet, Chem. Phys. 284, 129-138 (2002).

304. “Dynamic Etching Of Silicon For Broadband Antireflection Applications,” C. C. Striemer and P. M. Fauchet, Appl. Phys. Lett. 81, 2980-2982 (2002).

303. “Ordering And Self-Organized Growth Of Si In The Si/SiO2 Superlattice System,” D. J. Lockwood, G. F. Grom, P. M. Fauchet, and L. Tsybeskov, J. Cryst. Growth 237-239, 1898-1903 (2002).

302. “Porous Silicon Multilayer Structures: A Photonic Bandgap Approach,” J. E. Lugo, H. A. Lopez, S. Chan, and P. M. Fauchet, J. Appl. Phys. 91, 4966-4972 (2002).

301. “Electrically Tunable Silicon-Based Mirrors,” S. M. Weiss and P. M. Fauchet, in Silicon-Based and Hybrid Optoelectronics IV, edited by D. J. Robbins and G. E. Jabbour (SPIE, Bellingham, WA, 2002), Vol. 4654, pp 36-44.

300. “Identification Of Gram Negative Bacteria Using Nanoscale Silicon Microcavities,” S. Chan, S. R. Horner, P. M. Fauchet, and B. L. Miller, J. Am. Chem. Soc. 123, 11797-11798 (2001).

299. “Controlled Nucleation Of Silicon Nanocrystals On A Periodic Template,” C. C. Striemer, R. Krishnan, P. M. Fauchet, L. Tsybeskov, and Q. Xie, Nano Letters 1, 643-646 (2001).

298. “Self-Organization And Ordering In Nanocrystalline Si/SiO2 Superlattices,” D. J. Lockwood, G. F. Grom, L. Tsybeskov, P. M. Fauchet, H. J. Labbe, J. P. McCaffrey, and B. White, Jr., Physica E 11, 99-103 (2001).

297. “Tunable Porous Silicon Photonic Band Gap Structures,” J. E. Lugo, H. A. Lopez, S. Chan, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 677, E4.6.1-4.6.6 (2001).

296. “Modeling Carrier Transport In Oxide-Passivated Nanocrystalline Silicon LEDs,” K. D. Hirschman and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 638, F18.4.1-18.4.6 (2001).

295. “Erbium Emission From Silicon Based Photonic Bandgap Materials,” H. A. Lopez, J. E. Lugo, S. Chan, S. M. Weiss, C. C. Striemer, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 638, F17.2.1-17.2.6 (2001).

294. “Nanoscale Silicon Microcavity Optical Sensors For Biological Applications,” S. Chan, S. R. Horner, B. L. Miller, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 638, F10.4.1-10.4.6 (2001).

293. “Raman Spectroscopy Of Si Nanocrystals In Nanocrystalline Si Superlattices: Size, Shape, and Crystallographic Orientation,” G. F. Grom, P. M. Fauchet, L. Tsybeskov, J. P. McCaffrey, H. J. Labbe, D. J. Lockwood, and B. E. White, Mat. Res. Soc. Symp. Proc. 638, F6.1.1-6.1.6 (2001).

292. “Lateral Superlattices Fabricated With Interferometric Lithography For Nanoscale Device Applications,” C. C. Striemer, P. M. Fauchet, and L. Tsybeskov, Mat. Res. Soc. Symp. Proc. 638, F5.13.1-5.13.6 (2001).

291. “Carrier Transport And Lateral Conductivity In Nanocrystalline Silicon Layers,” H. B. Kim, L. Montes, Krishnan, P. M. Fauchet, and L. Tsybeskov, Mat. Res. Soc. Symp. Proc. 638, F5.12.1-5.12.5 (2001).

290. “Atomic Force Microscopy And Raman Spectroscopy Of Nanoscale Si/SiO2 Superlattices,” R. Krishnan, G. F. Grom, P. M. Fauchet, L. Tsybeskov, S. Papernov, G. I. Sproule, and D. J. Lockwood, Mat. Res. Soc. Symp. Proc. 638, F5.4.1-5.4.6 (2001).

289. “Optical And Structural Characterization Of Nanocrystalline Silicon Superlattices: Toward Nanoscale Silicon Metrology,” S. Zollner, A. Konkar, H. Yapa, P. F. Dryer, V. A. Neeley, Q. Xie, G. F. Grom, Q. Zhu, R. Krishnan, P. M. Fauchet, and L. Tsybeskov, Mat. Res. Soc. Symp. Proc. 638, F5.1.1-5.1.6 (2001).

288. “A Memory Device Utilizing Resonant Tunneling In Nanocrystalline Silicon Superlattices,” L. Montes, G. F. Grom, R. Krishnan, P. M. Fauchet, L. Tsybeskov, and B. E. White, Jr., Mat. Res. Soc. Symp. Proc. 638, F2.3.1-2.3.6 (2001).

287. “Nanoscale Silicon Microcavities For Biosensing,” S. Chan, Y. Li, L. J. Rothberg, B. L. Miller, and P. M. Fauchet, Mat. Sci. & Eng. C15, 277-282 (2001) (Invited).

286. “Electrochemical Etching Of Silicon Substrates For Photovoltaic Applications,” C. C. Striemer, F. Shi, and P. M. Fauchet, in Photovoltaics for the 21st Century II, edited by R. D. McConnell and V. K. Kapur (The Electrochemical Society, Pennington, NJ, 2001), pp 370-378.

285. “Resonant Tunneling In Partially Disordered Silicon Nanostructures,” L. Tsybeskov, G. F. Grom, R. Krishnan, L. Montes, P. M. Fauchet, D. Kovalev, J. Diener, V. Timoshenko, F. Koch, J. P. McCaffrey, J. –M. Baribeau, G. I. Sproule, D. J. Lockwood, Y. M. Niquet, C. Delerue, and G. Allan, Europhys. Lett. 55, 552-558 (2001).

284. “Silicon Microcavity Light Emitting Devices,” S. Chan and P. M. Fauchet, Optical Materials 17, 31-34 (2001).

283. “Electron And Hole Dynamics In GaN,” H. Ye, G. W. Wicks, and P. M. Fauchet, Mat. Sci. & Eng. B82, 131-133 (2001).

282. “Nanoscale Light Modulators From Silicon-Liquid Crystal Hybrids,” M. V. Wolkin, S. Chan, and P. M. Fauchet, in Silicon-Based and Hybrid Optoelectronics III, edited by D. J. Robbins, J. A. Trezza, and G. E. Jabbour (SPIE, Bellingham, WA, 2001), Vol. 4293, pp 23-31.

281. “Infrared LEDs And Microcavities Based On Erbium-Doped Silicon Nanocomposites,” H. A. Lopez and P. M. Fauchet, Mat. Sci. & Eng. B81, 91-96 (2001) (Invited).

280. “Femtosecond Spectroscopy In ZnO With Tunable UV Pulses,” H. Ye, P. M. Fauchet, S. Mathukumar, and Y. Lu, in Ultrafast Phenomena in Semiconductors V, edited by H. Jiang, K.T. Tsen and J. J. Song (SPIE, Bellingham, WA, 2001), Vol. 4280, pp 114-122.

279. “Silicon Light Emitters: Preparation, Properties, Limitations, And Integration With Microelectronic Circuitry,” P. M. Fauchet, S. Chan, H. A. Lopez, and K. D. Hirschman, in Frontiers of Nano-Optoelectronic Systems, edited by L. Pavesi and E. Buzaneva (Kluwer, Dordrecht, 2000), pp 99-119 (Invited).

278. “Deposition Of Erbium Containing Film In Porous Silicon From Ethanol Solution Of Erbium Salt,” V. Petrovich, S. Volchek, L. Dolgyi, L. Kazuchits, V. Yakovtseva, V. Bondarenko, L. Tsybeskov, and P. Fauchet, J. Porous Mater. 7, 37-40 (2000).

277. “Erbium Emission From Porous Silicon One-Dimensional Photonic Band Gap Structures,” H. A. Lopez and P. M. Fauchet, Appl. Phys. Lett. 77, 3704-3706 (2000).

276. “Porous Silicon Encapsulated Nematic Liquid Crystals For Electro-Optic Applications,” M. V. Wolkin, S. Chan, and P. M. Fauchet, Phys. Stat. Sol. (a) 182, 573-578 (2000).

275. “Porous Silicon Microcavities For Biosensing Applications,” S. Chan, P. M. Fauchet, Y. Li,  L. J. Rothberg, and B. L. Miller, Phys. Stat. Sol. (a) 182, 541-546 (2000).

274. “1.54 µm Electroluminescence From Erbium-Doped Porous Silicon Composites For Photonic Applications,” H. A. Lopez and P. M. Fauchet, Phys. Stat. Sol. (a) 182, 413-418 (2000).

273. “Anisotropic Polarization Memory In Thermally Oxidized Porous Silicon,” H. Koyama and P. M. Fauchet, Appl. Phys. Lett. 77, 2316-2318 (2000).

272. “Ordering And Self-Organization In Nanocrystalline Silicon,” G. F. Grom, D. J. Lockwood, J. P. McCaffrey, H. J. Labbe, P. M. Fauchet, B. White, Jr., J. Diener, D. Kovalev, F. Koch, and L. Tsybeskov, Nature 407, 358-361 (2000).

271. “Anomalous Behavior Of Polarization Memory In Oxidized Porous Silicon,” H. Koyama and P. M. Fauchet, in Proc. First International Symposium on Advanced Luminescent Materials and Quantum Confinement, edited by M. Cahay, S. Bandyopadhyay, D. J. Lockwood, J. P. Leburton, N. Koshida, M. Meyyappan, and T. Sakamoto (The Electrochemical Society, Pennington, NJ, 1999), pp 21-26.

270. “Hot Hole Relaxation Dynamics In p-GaN,” H. Ye, G. W. Wicks, and P. M. Fauchet, Appl. Phys. Lett. 77, 1185-1187 (2000).

269. “Effects Of Size Restriction On Donor-Acceptor Recombination In AgBr,” P. J. Rodney, A. P. Marchetti, and P. M. Fauchet, Phys. Rev. B 62, 4215-4217 (2000).

268. “Extraordinary Crystallization Of Amorphous Si/SiO2 Superlattices,” M. Zacharias, M. Blasing, K. Hirschman, L. Tsybeskov, and P. M. Fauchet, J. Non-Cryst. Solids (Part A) 266, 640-644 (2000).

267. “Optical And Microstructural Characterization Of Nanocrystalline Silicon Superlattices,” L. Tsybeskov, G. F. Grom, R. Krishnan, P. M. Fauchet, J. P. McCaffrey, J. –M. Baribeau, G. I. Sproule, D. J. Lockwood, V. Timoshenko, J. Diener, H. Heckler, D. Kovalev, F. Koch, and T. N. Blanton, Mat. Res. Soc. Symp. Proc. 588, 173-185 (2000) (Invited).

266. “Room-Temperature Electroluminescence From Erbium-Doped Porous Silicon Composites For Infrared LED Applications,” H. A. Lopez and P. M. Fauchet, in Rare-Earth-Doped Materials and Devices IV, edited by S. Jiang (SPIE, Bellingham, WA, 2000), Vol. 3942, pp 87-96.

265. “Nanoscale Microcavities For Biomedical Sensor Applications,” S. Chan, P. M. Fauchet, Y. Li, and L. J. Rothberg, in Micro- and Nanotechnology for Biomedical and Environmental Applications, edited by R. P. Mariella, Jr. (SPIE, Bellingham, WA, 2000), Vol. 3912, pp 23-34.

264. “Femtosecond Spectroscopy In Doped GaN,” H. Ye, G. W. Wicks, and P. M. Fauchet, in Ultrafast Phenomena in Semiconductors IV, edited by K.T. Tsen and J. J. Song (SPIE, Bellingham, WA, 2000), Vol. 3940, pp 235-245.

263. “Nanocrystalline Silicon Superlattices: Building Blocks For Quantum Devices,” L. Tsybeskov, G. F. Grom, M. Jungo, L. Montes, P. M. Fauchet, J. P. McCaffrey, J. -M. Baribeau, G. I. Sproule and D. J. Lockwood, Mat. Sci. & Eng. B69-70, 303-308 (2000) (Invited).

262. “Laser-Induced Thermal Effects On The Optical Properties Of Free-Standing Porous Silicon Films,” H. Koyama and P. M. Fauchet, J. Appl. Phys. 87, 1788-1794 (2000).

261. “Erbium Doped Oxidized Porous Silicon For Integrated Optical Waveguides,” V. Bondarenko, V. Yakovtseva, L. Dolgyi, N. Vorozov, N. Kazuchits, L. Tsybeskov, and  P. Fauchet, Technical Physics Lett. (St.-Petersburg) 25, 69-73 (1999).

260. “Silicon: Porous,” P. M. Fauchet, in Encyclopedia of Applied Physics, Update 2, Wiley-VCH Verlag, pp 249-272 (1999).

259. “Correlation Of Photoluminescence And Bandgap Energies With Nanocrystal Sizes In Porous Silicon,” J. von Behren, M. Wolkin-Vakrat, J. Jorné, and P. M. Fauchet, Journ. Porous Materials 7, 81-84 (2000).

258. “Room-Temperature Electroluminescence From Erbium-Doped Porous Silicon,” H. A. Lopez and P. M. Fauchet, Appl. Phys. Lett. 75, 3989-3991 (1999).

257. “Low Temperature Photophysics Of AgI Micro And Nanocrystals,” P. J. Rodney, A. P. Marchetti, and P. M. Fauchet, Radiation Effects & Defects in Solids 150, 327-332 (1999).

256. “Phonon-Assisted Tunneling And Interface Quality In Nanocrystalline Si/ Amorphous SiO2 Superlattices,” L. Tsybeskov, G. F. Grom, P. M. Fauchet, J. P. McCaffrey, J. -M. Baribeau, G. I. Sproule, and D. J. Lockwood, Appl. Phys. Lett. 75, 2265-2267 (1999).

255. “Porous Silicon: Fundamental Properties, Carrier Transport, Light-Emitting Devices, And Optoelectronic Applications,” P. M. Fauchet, in the Proceedings of the International School of Physics “Enrico Fermi,’ Course CXLI Silicon-Based Microphotonics: from Basics to Applications, edited by O. Bisi, S. U. Campisano, L. Pavesi, and F. Priolo (Italian Physical Society, IOS Press, Amsterdam, Oxford, Tokyo, Washington DC, 1999), pp 163-190 (Invited).

254. “Tunable, Narrow, And Directional Luminescence From Porous Silicon Light Emitting Devices,” S. Chan and P. M. Fauchet, Appl. Phys. Lett. 75, 274-276 (1999).

253. “Femtosecond Spectroscopy In GaN With Tunable UV Pulses,” H. Ye, G. W. Wicks, and P. M. Fauchet, in Ultrafast Phenomena in Semiconductors III, edited by K.T. Tsen (SPIE, Bellingham, WA, 1999), Vol. 3624, pp 188-197.

252. “Thermal Crystallization Of Amorphous Si/SiO2 Superlattices,” M. Zacharias, J. Blasing, P. Veit, L. Tsybeskov, K. D. Hirschman, and P. M. Fauchet, Appl. Phys. Lett. 74, 2614-2616 (1999).

251. “LEDs Based On Oxidized Porous Polysilicon On A Transparent Substrate,” C. C. Striemer, S. Chan, H. A. Lopez, K. D. Hirschman, H. Koyama, Q. Zhu, L. Tsybeskov, P. M. Fauchet, N. M. Kalkhoran, and L. Depaulis, Mat. Res. Soc. Symp. Proc. 536, 511-515 (1999).

250. “Optical Analysis Of Plasma Enhanced Crystallization Of Amorphous Silicon Films,” L. Montes, L. Tsybeskov, P. M. Fauchet, K. Pangal, J. C. Sturm, and S. Wagner, Mat. Res. Soc. Symp. Proc. 536, 505-510 (1999).

249. “Modification Of Visible Light Emission From Silicon Nanocrystals As A Function Of Size, Electronic Structure, And Surface Passivation,” M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, Mat. Res. Soc. Symp. Proc. 436, 185-190 (1999).

248. “Structural Characterization Of nc-Si/a-SiO2 Superlattices Subjected To Thermal Treatment,” G. F. Grom, L. Tsybeskov, K. D. Hirschman, P. M. Fauchet, J. P. McCaffrey, H. J. Labbé, and D. J. Lockwood, Mat. Res. Soc. Symp. Proc. 536, 141-146 (1999).

247. “Integration Of Multilayers In Er-Doped Porous Silicon Structures And Advances In 1.5 µm Optoelectronic Devices,” H. A. Lopez, S. Chan, L. Tsybeskov, H. Koyama, V. P. Bondarenko, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 536, 135-140 (1999).

246. “Porous Silicon Multilayer Mirrors And Microcavity Resonators For Optoelectronic Applications,” S. Chan, L. Tsybeskov, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 536, 117-122 (1999).

245. “Formation And Luminescent Properties Of Oxidized Porous Silicon Doped With Erbium By Electrochemical Procedure,” V. Bondarenko, N. Vorozov, L. Dolgyi, V. Yakovtseva, V. Petrovich, S. Volchek, N. Kazuchits, G. Grom, H. A. Lopez, L. Tsybeskov, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 536, 69-74 (1999).

244. “Integration Of Electrically Isolated Porous Silicon LEDs For Applications In CMOS Technology,” K. D. Hirschman, L. Tsybeskov, C. C. Striemer, S. Chan, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 536, 21-26 (1999).

243. “Strongly Superlinear Light Emission And Large Induced Absorption In Oxidized Porous Silicon Films,” H. Koyama and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 536, 9-14 (1999).

242. “Silicon Interference Filters And Bragg Reflectors For Active And Passive Integrated Optoelectronic Components,” S. Chan and P. M. Fauchet, in Silicon-Based Optoelectronics, edited by D. C. Houghton and E. A. Fitzgerald (SPIE, Bellingham, WA, 1999), Vol. 3630, pp 144-154.

241. “Tunability Of The Photoluminescence In Porous Silicon Due To Different Polymer Dielectric Environments,” H. A. Lopez, X. L. Chen, S. A. Jenekhe, and P. M. Fauchet, Journ. Luminesc. 80, 115-118 (1998).

240. “Strongly Nonlinear Luminescence In Oxidized Porous Silicon Films,” H. Koyama, L. Tsybeskov, and P. M. Fauchet, Journ. Luminesc. 80, 99-102 (1998).

239. “The Integration Of Nanoscale Porous Silicon Light Emitters: Materials Science, Properties, And Integration With Electronic Circuitry,” P. M. Fauchet, Journ. Luminesc. 80, 53-64 (1998) (Invited).

238. “Optical And Structural Characterization Of nc-Si/a-SiO2 Superlattices,” G. Grom, L. Tsybeskov, K. D. Hirschman, P. M. Fauchet, M. Zacharias, T. N. Blanton, J. P. McCaffrey, J. –M. Baribeau, G. I. Sproule, H. J. Labbe, and D. J. Lockwood, in Applications of Photonic Technology 3: Closing the Gap between Theory, Development, and Applications, edited by G.A. Lampropoulos and R.A. Lessard (SPIE, Bellingham, WA, 1998), Vol. 3491, pp 671-676.

237. “Intrinsic Picosecond Response Times Of Y-Ba-Cu-O Superconducting Photodetectors,” M. Lindgren, M. Currie, C. Williams, T. Y. Hsiang, P. M. Fauchet, R. Sobolewski, S. H. Moffat, R. A. Hughes, J. S. Preston, and F. A. Hegmann, Appl. Phys. Lett. 74, 853-855 (1999).

236.“Hot Carrier Relaxation Time In GaN,” H. Ye, G. W. Wicks, and P. M. Fauchet, Appl. Phys. Lett. 74, 711-713 (1999).

235. “Electronic States And Luminescence In Porous Silicon Quantum Dots: The Role Of Oxygen,” M. V. Wolkin, J. Jorné, P. M. Fauchet, G. Allan, and C. Delerue, Phys. Rev. Lett. 82, 197-200 (1999).

234. “Progress Toward Nanoscale Silicon Light Emitters,” P. M. Fauchet, IEEE Jour. Selected Topics in Quantum Electron. 4, 1020-1028 (1998) (Invited).

233. “Very Large Continuous-Wave-Laser-Induced Optical Absorption In Porous Silicon Films: Evidence For Thermal Effects,” H. Koyama and P. M. Fauchet, Appl. Phys. Lett. 73, 3259-3261 (1998).

232. “Nanocrystalline Silicon Superlattices: Fabrication And Characterization,” M. Zacharias, L. Tsybeskov, K. D. Hirschman, P. M. Fauchet, J. Blasing, P. Kohlert, and P. Veit, J. Non-Cryst. Solids 227, 1132-1136 (1998).

231. “Light Emission From Ge And GeO2 Nanocrystals,” M. Zacharias and P. M. Fauchet, J. Non-Cryst. Solids 227, 1058-1062 (1998).

230. “Nanoscale Silicon For Electroluminescent Devices,” P. M. Fauchet and L. Tsybeskov, in Physics and Simulation of Optoelectronic Devices VI, edited by M. Osinski, P. Blood, and A. Ishibashi (SPIE, Bellingham, WA, 1998), Vol. 3283, pp 793-807 (Invited).

229. “Er-Doped Porous Silicon LED For Integrated Optoelectronics,” L. Tsybeskov, G. Grom, K. D. Hirschman, H. A. Lopez, S. Chan,  P. M. Fauchet, and V. Bondarenko, Mat. Res. Soc. Symp. Proc. 486, 145-150 (1998).

228. “Practical Nanoscale Silicon Light Emitters,” P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 486, 21-32 (1998) (Invited).

227. “Nanocrystalline Silicon/Amorphous Silicon Dioxide Superlattices,” P. M. Fauchet, L. Tsybeskov, M. Zacharias, and K. Hirschman, Mat. Res. Soc. Symp. Proc. 485, 49-59 (1998) (Invited).

226. “Photovoltaic Device Applications Of Porous Microcrystalline Silicon,” S. P. Duttagupta, P. M. Fauchet, A. C. Ribes, H. F. Tiedje, S. Damaskinos, T. E. Dixon, D. E. Brodie, and S. K. Kurinec, Solar Energy Materials & Solar Cells 52, 271-283 (1998).

225. “Spatiotemporal Shaping Of Half-Cycle Terahertz Pulses By Diffraction Through Conductive Apertures Of Finite Thickness, ” J. Bromage, S. Radic, G. P. Agrawal, C. R. Stroud, Jr., P. M. Fauchet, and R. Sobolewski, J. Opt. Soc. Am. B 15, 1399-1405 (1998).

224. “Quantum Confinement In Nanoscale Silicon: The Correlation Of Size With Bandgap And Luminescence,” J. von Behren, T. van Buuren, M. Zacharias, E. H. Chimowitz, and P. M. Fauchet, Solid State Commun. 105, 317-322 (1998).

223. “Fabrication Of Nanocrystalline Silicon Superlattices By Controlled Thermal Recrystallization,” L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, P. M. Fauchet, M. Zacharias, J. P. McCaffrey, and D. J. Lockwood, Phys. Stat. Sol. (a) 165, 69-77 (1998) (Invited).

222. “Porous Silicon Physics And Device Applications: A Status Report,” P. M. Fauchet, J. von Behren, K. D. Hirschman, L. Tsybeskov, and S. P. Duttagupta, Phys. Stat. Sol. (a) 165, 3-13 (1998) (Invited Plenary).

221. “Absorption Coefficient Of Porous Silicon,” J. von Behren and P. M. Fauchet, in Properties of Porous Silicon, L. T. Canham, editor, Electronic Materials Information Service Datareviews Series No 18 (INSPEC, The Institution of Electrical Engineers, London, UK, 1997), pp. 229-233.

220. “Microhardness Of Porous Silicon,” S. P. Duttagupta and P. M. Fauchet, in Properties of Porous Silicon, L. T. Canham, editor, Electronic Materials Information Service Datareviews Series No 18 (INSPEC, The Institution of Electrical Engineers, London, UK, 1997), pp. 132-137.

219. “Defect Luminescence In Films Containing Ge And GeO2 Nanocrystals,” M. Zacharias, S. J. Atherton, and P.M. Fauchet, Mat. Res. Soc. Symp. Proc. 467, 379-384 (1997).

218. “Nanocrystalline-Silicon Superlattice Produced By Controlled Recrystallization,” L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, M. Zacharias, P. M. Fauchet, J. McCaffrey, and D. J. Lockwood, Appl. Phys. Lett. 72, 43-45 (1998).

217. “Optical And Structural Characterization Of Free-Standing Ultrahigh Porosity Silicon Thin Films,” J. von Behren, M. Zacharias, P. M. Fauchet, and E. H. Chimowitz, in Pits and Pores: Formation, Properties, and Significance for Advanced Luminescent Materials, edited by P. Schmuki, D. J. Lockwood, H. Isaacs, and A. Bsiesy (The Electrochemical Society, Pennington, NJ, 1997), pp 524-532.

216. “Porous Silicon: Formation Mechanisms, Properties, And Device Applications,” P. M. Fauchet, in Pits and Pores: Formation, Properties, and Significance for Advanced Luminescent Materials, edited by P. Schmuki, D. J. Lockwood, H. Isaacs, and A. Bsiesy (The Electrochemical Society, Pennington, NJ, 1997), pp 27-60 (Plenary).

215. “The Strong Visible Luminescence In Porous Silicon: Quantum Confinement, Not Oxide-Related Defects,” P. M. Fauchet and J. von Behren, Phys. Stat. Sol. (b) 204, R7-R8 (1997).

214. “Blue Luminescence From Ge And GeO2 Nanocrystallites Prepared By DC Magnetron Sputtering,” M. Zacharias, M. Schmidt, and P. M. Fauchet, in Quantum Confinement: Nanoscale Materials, Devices, and Systems, edited by M. Cahay, J. P. Leburton, D. J. Lockwood, and S. Bandyopadhyay (The Electrochemical Society, Pennington, NJ, 1997), pp 287-297.

213. “Fabrication And Characterization Of Nanocrystalline Silicon Superlattices Produced By Controlled Recrystallization,” L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, P. M. Fauchet, M. Zacharias, P. Kohlert, J. P. McCaffrey, and D. J. Lockwood, in Quantum Confinement: Nanoscale Materials, Devices, and Systems, edited by M. Cahay, J. P. Leburton, D. J. Lockwood, and S. Bandyopadhyay (The Electrochemical Society, Pennington, NJ, 1997), pp 134-145.

212. “Porous Silicon: Photoluminescence And Electroluminescent Devices,” P. M. Fauchet, in Light Emission in Silicon: From Physics to Devices, D.J. Lockwood editor, Semiconductors and Semimetals, Volume 49 (Academic Press, San Diego, 1998), pp 206-252 (Invited).

211. “Critical Behavior And The Processing Of Nanoscale Porous Materials,” J. von Behren, E. H. Chimowitz, and P. M. Fauchet, Adv. Mater. 9, 921-926 (1997).

210. “Femtosecond Infrared Spectroscopy Of Hot Electrons In An In0.53Ga0.47As/In0.52Al0.48As Multiple Quantum Well Structure,” T. A. Gardiner, Ju. V. Vandyshev, G. W. Wicks, and P. M. Fauchet, in Ultrafast Electronics and Optoelectronics, edited by M. Nuss and J. Bowers, OSA Trends in Optics and Photonics Series Vol. 13 (Optical Society of America, Washington, DC, 1997), pp 280-283.

209. “An Ultrafast High-Tc Superconducting Y-Ba-Cu-O Photodetector,” M. Lindgren, W.-S. Zeng, M. Currie, C. Williams, T. Y. Hsiang, P. M. Fauchet, and R. Sobolewski, in Ultrafast Electronics and Optoelectronics, edited by M. Nuss and J. Bowers, OSA Trends in Optics and Photonics Series Vol. 13 (Optical Society of America, Washington, DC, 1997), pp 102-105.

208. “YBa2Cu3O7-x Thin-Film Picosecond Photoresponse In The Resistive State,” M. Lindgren, M. Currie, C. Williams, T. Y. Hsiang, P. M. Fauchet, R. Sobolewski, S. H. Moffat, R. A. Hughes, J. S. Preston, and F. A. Hegmann, IEEE Trans. Applied Superconductivity 7, 3422-3425 (1997).

207. “Blue Luminescence In Films Containing Ge And GeO2 Nanocrystals: The Role Of Defects,” M. Zacharias and P. M. Fauchet, Appl. Phys. Lett. 71, 380-382 (1997).

206. “Stable Photoluminescence And Electroluminescence From Porous Silicon,” P. M. Fauchet, L. Tsybeskov, S. P. Duttagupta, and  K. D. Hirschman, Thin Solid Films 297, 254-260 (1997) (Invited).

205. “Spatiotemporal Shaping Of Terahertz Pulses,” J. Bromage, S. Radic, G. P. Agrawal, C. R. Stroud, Jr., P. M. Fauchet, and R. Sobolewski, Optics Lett. 22, 627-629 (1997).

204. “Ultrafast Photoresponse In Microbridges And Pulse Propagation In Transmission Lines Made Of High-Tc Superconducting Y-Ba-Cu-O Thin-Film,” M. Lindgren, M. Currie, C. A. Williams, T. Y. Hsiang, P. M. Fauchet, R. Sobolewski, S. H. Moffat, R. A. Hughes, J. S. Preston, and F. A. Hegmann, IEEE Journ. Select. Topics Quantum Electron 2, 668-678 (1996).

203. “Room-Temperature Photoluminescence And Electroluminescence From Er-Doped Silicon-Rich Silicon Oxide,” L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman, P. M. Fauchet, K. L. Moore, and D. G. Hall, Appl. Phys. Lett. 70, 1790-1792 (1997).

202. “Integrating Bipolar junction Transistors With Silicon-Based Light-Emitting Devices,” K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 452, 705-710 (1997).

201. “Preparation And Characterization Of The Active Layer For An LED Based On Oxidized Porous Silicon,” L. Tsybeskov, K. D. Hirschman, L. F. Moore, P. M. Fauchet, and P. D. J. Calcott, Mat. Res. Soc. Symp. Proc. 452, 687-692 (1997).

200. “Electroluminescence And Carrier Transport In LEDs Based On Silicon-Rich Silicon Oxide,” L. Tsybeskov, K. D. Hirschman, S. P. Duttagupta, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 452, 681-686 (1997).

199. “Porous Microcrystalline Silicon Solar Cells,” S. P. Duttagupta, S. K. Kurinec, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 452, 625-630 (1997).

198. “Electron Time-Of-Flight Measurements In Porous Silicon,” P. Rao, E. A. Schiff, L. Tsybeskov, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 452, 613-618 (1997).

197. “Optical Properties Of Free-Standing Ultrahigh Porosity Silicon Films Prepared By Supercritical Drying,” J. von Behren, P. M. Fauchet, E. H. Chimowitz, and C. T. Lira, Mat. Res. Soc. Symp. Proc. 452, 565-570 (1997).

196. “Light Emission From Intrinsic And Doped Silicon-Rich Silicon Oxide: From The Visible To 1.6 µm,” L. Tsybeskov, K. L. Moore, P. M. Fauchet, and D. G. Hall, Mat. Res. Soc. Symp. Proc. 452, 523-528 (1997).

195. “Room Temperature Band-Edge Luminescence From Silicon Grains Prepared By The Recrystallization Of Mesoporous Silicon,” K. L. Moore, L. Tsybeskov, P. M. Fauchet, and D. G. Hall, Mat. Res. Soc. Symp. Proc. 452, 517-522 (1997).

194. “Fabrication And Characterization Of Light Emitting Porous Silicon And Polymer Nanocomposites,” S. P. Duttagupta, P. M. Fauchet, X. L. Chen, and S. A. Jenekhe, Mat. Res. Soc. Symp. Proc. 452, 473-478 (1997).

193. “Optical Properties Of Cuprous Oxide Nanocrystals,” P. J. Rodney, M. I. Freedhoff,” A. P. Marchetti, G. L. McLendon, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 452, 383-388 (1997).

192. “Porous Silicon: From Luminescence To LEDs,” R. T. Collins, P. M. Fauchet, and M. A. Tischler, Physics Today 50, 24-31 (1997) (Invited).

191. “Microhardness Of Porous Silicon Films And Composites,” S. P. Duttagupta, X. L. Chen, S. A. Jenekhe, and P. M. Fauchet, Solid State Commun. 101, 33-37 (1997).

190. “Drift Mobility Measurements In Porous Silicon,” L. Tsybeskov, C. Peng, P. M. Fauchet, Q. Gu and E. A. Schiff, Mat. Res. Soc. Symp. Proc. 420, 825-829 (1996).

189. “A New Confocal Scanning Laser MACROscope/Microscope Applied To The Characterization Of Solar Cells,” A. C. Ribes, S. Damaskinos, H. F. Tiedje, A. E. Dixon, D. E. Brodie, S. P. Duttagupta, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 426, 581-586 (1996).

188. “Silicon-Based Visible Light-Emitting Devices Integrated Into Microelectronic Circuits,” K. D. Hirschman, L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, Nature 384, 338-340 (1996).

187. “A Si-Based Light-Emitting Diode With Room-Temperature Electroluminescence At 1.1 eV,” L. Tsybeskov, K. L. Moore, S. P. Duttagupta, K. D. Hirschman, D. G. Hall, and P. M. Fauchet, Appl. Phys. Lett. 69, 3411-3413 (1996).

186. “Mid-Infrared Femtosecond Spectroscopy Of Intersubband Hot Hole Relaxation In Quantum Wells,” P. M. Fauchet, G. W. Wicks, Ju. V. Vandyshev, Z. Xu, C. W. Rella, and H. A. Schwettman, in Ultrafast Phenomena X, edited by P.F. Barbara, J.G. Fujimoto, W.H. Knox, and W. Zinth (Springer-Verlag, Berlin, 1996), pp. 398-399.

185. “Ultrafast Excitation And Deexcitation Of Local Vibrational Modes In A Solid Matrix: The Si-H Bond In Amorphous Silicon,” Z. Xu, J. V. Vandyshev, P. M. Fauchet, C. W. Rella, H. A. Schwettman, and C. C. Tsai, in Ultrafast Phenomena X, edited by P.F. Barbara, J.G. Fujimoto, W.H. Knox, and W. Zinth (Springer-Verlag, Berlin, 1996), pp. 410-411.

184. “Photoluminescence And Electroluminescence From Porous Silicon,” P. M. Fauchet, Journ. Luminesc. 70, 294-309 (1996) (Invited).

183. “Intrinsic Band-Edge Photoluminescence From Silicon Clusters At Room Temperature,” L. Tsybeskov, K. L. Moore, D. G. Hall, and P. M. Fauchet, Phys. Rev. B 54, R8361-R8364 (1996).

182. “The Femtosecond Optical Response Of Porous, Amorphous And Crystalline Silicon,” J. von Behren, Y. Kostoulas, K. B. Ucer and P. M. Fauchet, J. Non-Cryst. Solids 198-200, 957-960 (1996).

181. “Ultrafast Excitation And De-Excitation Of The Si-H Stretching Mode In a-Si:H,” Z. Xu, P. M. Fauchet, C. W. Rella, H. A. Schwettman, and C. C. Tsai, J. Non-Cryst. Solids 198-200, 11-14 (1996).

180. “Temperature Dependence Of The Intersubband Hole Relaxation In p-Type Quantum Wells,” Z. Xu, G. W. Wicks, C. W. Rella, H. A. Schwettman, and P. M. Fauchet, in Hot Carriers in Semiconductors, edited by K. Hess, J.-P. Leburton and U. Ravaioli (Plenum, New York, 1996), pp 65-68.

179. “Hot Carrier Thermalization In Low-Temperature-Grown III-V Semiconductors,” A. I. Lobad, Y. Kostoulas, G. W. Wicks and P. M. Fauchet, in Hot Carriers in Semiconductors, edited by K. Hess, J.-P. Leburton and U. Ravaioli (Plenum, New York, 1996), pp 97-99.

178. “Carrier Transport In Porous Silicon Light-Emitting Devices,” C. Peng, K. D. Hirschman and P. M. Fauchet, J. Appl. Phys. 80, 295-300 (1996).

177. “Conduction And Valence Band Edges Of Porous Silicon Determined By Electron Transfer,” J. M. Rehm, G. L. McLendon and P. M. Fauchet, J. Am. Chem. Soc. 118, 4490-4491 (1996).

176. “Efficient Electroluminescence From Oxidized Porous Silicon,” L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman and P. M. Fauchet, in Advanced Luminescent Materials, edited by D.J. Lockwood, P.M. Fauchet, N. Koshida, and S.R.J. Brueck (The Electrochemical Society, Pennington, NJ, 1996), pp 34-47 (Invited).

175. “Determining The Conduction Band And Valence Band Shift Of Porous Silicon Using Electron Transfer,” J. M. Rehm, G. L. McLendon, and P. M. Fauchet, in Advanced Luminescent Materials, edited by D.J. Lockwood, P.M. Fauchet, N. Koshida, and S.R.J. Brueck (The Electrochemical Society, Pennington, NJ, 1996), pp 212-221.

174. “Stable And Efficient Electroluminescence From A Porous Silicon-Based Bipolar Device,” L. Tsybeskov, S. P. Duttagupta, K. D. Hirschman and P. M. Fauchet, Appl. Phys. Lett. 68, 2058-2060 (1996).

173. “Light-Emitting Porous Silicon: Materials Science, Properties, and Device Applications,” P. M. Fauchet, L. Tsybeskov, C. Peng, S. P. Duttagupta, J. von Behren, Y. Kostoulas, J. V. Vandyshev, and K. D. Hirschman, IEEE Jour. Selected Topics in Quantum Electron. 1, 1126-1139 (1995) (Invited).

172. “Confocal Imaging Of Porous Silicon With A Scanning Laser Macroscope/Microscope,” A. C. Ribes, S. Damaskinos, A. E. Dixon, K. A. Ellis, S. P. Duttagupta, and P. M. Fauchet, Progr. Surf. Sci. 50, pp 295-304 (1995).

171. “Femtosecond Carrier Dynamics In Low-Temperature Grown Ga0.51In0.49P,” Y. Kostoulas, K. B. Ucer, G. W. Wicks and P. M. Fauchet, Appl. Phys. Lett. 67, 3756-3758 (1995).

170. “Manufacture Of Submicron Light-Emitting Porous Silicon Areas For Miniature LEDs,” S. P. Duttagupta, C. Peng, L. Tsybeskov, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 380, 73-78 (1995).

169. “The Ultrafast Carrier Dynamics In Semiconductors: The Role Of Defects,” P. M. Fauchet, G. W. Wicks, Y. Kostoulas, A. I. Lobad, and K. B. Ucer, Mat. Res. Soc. Symp. Proc. 378, 171-176 (1995).

168. “The Frequency Response Of Porous Silicon Electroluminescent Devices,” C. Peng and P. M. Fauchet, Appl. Phys. Lett. 67, 2515-2517 (1995).

167. “Ultrafast Carrier Dynamics In Porous Silicon,” P. M. Fauchet, Phys. Stat. Sol. (b) 190, 53-62 (1995) (Invited).

166. “Time-Resolved Photoluminescence Measurements In Spark-Processed Blue And Green Emitting Silicon,” R. E. Hummel, M. H. Ludwig, S.-S. Chang, P. M. Fauchet, Ju. V. Vandyshev, and L. Tsybeskov, Solid State Commun. 95, 553-558 (1995).

165. “Electro-Optic Sampling Of 1.5-PS Photoresponse Signals From YBa2Cu3O7-d Thin Films,” F. A. Hegmann, D. Jacobs-Perkins, C.-C. Wang, S. H. Moffat, R. A. Hughes, J. S. Preston, M. Currie, P. M. Fauchet, T. Y. Hsiang, and R. Sobolewski, Appl. Phys. Lett. 67, 285-287 (1995).

164. “How Methanol Affects The Surface Of Blue And Red Emitting Porous Silicon,” J. M. Rehm, G. L. McLendon, L. Tsybeskov, and P. M. Fauchet, Appl. Phys. Lett. 66, 3669-3671 (1995).

163. “Photoluminescence And Electroluminescence In Partially Oxidized Porous Silicon,” L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, Solid State Commun. 95, 429-433 (1995).

162. “Enhancement And Suppression Of The Formation Of Porous Silicon,” S. P. Duttagupta, C. Peng, P. M. Fauchet, S. K. Kurinec, and T. N. Blanton, J. Vac. Sci. Technol. B 13, 1230-1235 (1995).

161. “Properties Of Ultrathin Films Of Porous Silicon,” J. von Behren, K. B. Ucer, L. Tsybeskov, Ju. V. Vandyshev, and P. M. Fauchet, J. Vac. Sci. Technol. B 13, 1225-1229 (1995).

160. “Hole Relaxation In p-Type InxGa1-xAs/AlyGa1-yAs Quantum Wells Observed By Ultrafast Midinfrared Spectroscopy,” Z. Xu, P. M. Fauchet, C. W. Rella, B. A. Richman, H. A. Schwettman, and G. W. Wicks, Phys. Rev. B 51, 10631-10634 (1995).

159. “Confocal Scanning Beam Laser Microscope/Macroscope: Applications Requiring Large Data Sets,” A.E. Dixon, S. Damaskinos, A. Ribes, E. Sato, M.-C. Béland, T. Uesaka, B. Dalrymple, S.P. Duttagupta, and P.M. Fauchet, in Three-Dimensional Microscopy: Image Acquisition and Processing II (SPIE, Bellingham, WA, 1995), Volume 2412, pp 12-20.

158. “Photoluminescence Imaging Of Porous Silicon Using A Confocal Scanning Laser Macroscope/Microscope,” A.C. Ribes, S. Damaskinos, A.E. Dixon, G.E. Carver, C. Peng, P.M. Fauchet, T.K. Sham, and I. Coulthard, Appl. Phys. Lett. 66, 2321 (1995).

157. “Carrier Dynamics In Porous Silicon: From The Femtosecond To The Second,” P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 358, 525-536 (1995) (Invited).

156. “Investigation Of Chemical Adsorbate Effects On Blue And Red Emitting Porous Silicon Samples,” J. M. Rehm, G. L. McLendon, L. Tsybeskov, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 358, 393-398 (1995).

155. “Micron-Size And Submicron-Size Light-Emitting Porous Silicon Structures,” S. P. Duttagupta, P. M. Fauchet, C. Peng, S. K. Kurinec, K. Hirschman, and T. N. Blanton, Mat. Res. Soc. Symp. Proc. 358, 647-652 (1995).

154. “Post-Anodization Implantation And CVD Techniques For Passivation Of Porous Silicon,” S.P. Duttagupta, L. Tsybeskov, P.M. Fauchet, E. Ettedgui and Y. Gao, Mat. Res. Soc. Symp. Proc. 358, 381-386 (1995).

153. “Photoluminescence And Electroluminescence In Partially Oxidized Porous Silicon,” L. Tsybeskov, S. P. Duttagupta, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 358, 683-688 (1995).

152. “Carrier Transport In Porous Silicon Light-Emitting Diodes,” C. Peng, P. M. Fauchet, K. D. Hirschman, and S. K. Kurinec, Mat. Res. Soc. Symp. Proc. 358, 689-694 (1995).

151. “Preparation, Properties And Applications Of Free-Standing Porous Silicon Films,” J. von Behren, L. Tsybeskov, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 358, 333-338 (1995).

150. “Femtosecond Carrier Dynamics In Low-Temperature-Grown Indium Phosphide,” Y. Kostoulas, L. J. Waxer, I. A. Walmsley, G. W. Wicks, and P. M. Fauchet, Appl. Phys. Lett. 66, 1821-1823 (1995).

149. “Femtosecond Excited-State Dynamics Of A Conjugated Ladder Polymer,” X. Weng, Y. Kostoulas, P. M. Fauchet, J. A. Osaheni, and S. A. Jenekhe, Phys. Rev. B 51, 6838-6841 (1995).

148. “Preparation And Characterization Of Ultrathin Porous Silicon Films,” J. von Behren, L. Tsybeskov, and P. M. Fauchet, Appl. Phys. Lett. 66, 1662-1664 (1995).

147. “Second Harmonic Generation Near 4 µm In p-Type Asymmetric GaAs/AlGaAs/AlAs Quantum Wells,” Z. Xu, P. M. Fauchet, C. W. Rella, B. A. Richman, H. A. Schwettman, and G. W. Wicks, Solid State Commun. 93, 903-907 (1995).

146. “Femtosecond Optical Spectroscopy In Partially Deoxygenated Y-Ba-Cu-O Thin Films,” L. Shi, T. Gong, W. Xiong, X. Weng, R. Sobolewski, and P. M. Fauchet, in Ultrafast Phenomena IX, edited by P. F. Barbara, W. H. Knox, G. A. Mourou and A. H. Zewail (Springer-Verlag, Berlin, 1994), pp. 327-328.

145. “Ultrafast Electronic Processes In Porous Silicon,” P. M. Fauchet, Y. Kostoulas, J. V. Vandyshev, and V. Petrova-Koch, in Ultrafast Phenomena IX, edited by P.F. Barbara, W.H. Knox, G.A. Mourou and A.H. Zewail (Springer-Verlag, Berlin, 1994), pp. 283-284.

144. “Second-Harmonic Generation In p-Type Asymmetric GaAs-AlxGa1-xAs-AlAs Superlattices Due To Excitations Between Valence Minibands,” M. J. Shaw, M. Jaros, Z. Xu, P. M. Fauchet, C. W. Rella, B. A. Richman, H. A. Schwettman, and G. W. Wicks, Phys. Rev. B 50, 18,395-18,419 (1994).

143. “Light-Emitting Porous Silicon: A Status Report,” P. M. Fauchet, in Porous Silicon, edited by Z. C. Feng and R. Tsu (World Scientific, Singapore, 1994), pp. 449-465.

142. “Intense Room Temperature Light Emission In Porous Silicon: From Less Than 450 nm To Beyond 1.5 mm,” P. M. Fauchet, C. Peng, L. Tsybeskov, J. Vandyshev, A. Dubois, A. Raisanen, T. E. Orlowski, L. J. Brillson, J. E. Fouquet, S. L. Dexheimer, J. M. Rehm, G. L. McLendon, E. Ettedgui, Y. Gao, F. Seiferth, and S. K. Kurinec, in Semiconductor Silicon/94: Proceedings of the 7th International Symposium on Silicon Materials Science and Technology., edited by H. R. Huff, W. Bergholz and K. Sumino (The Electrochemical Society, Pennington, 1994), pp. 499-510.

141. “Carrier-Carrier Scattering Rates Within Nonequilibrium Optically Injected Semiconductor Plasmas,” J. F. Young, T. Gong, P.M. Fauchet, and P. J. Kelly, Phys. Rev. B 50, 2208-2215 (1994).

140. “The Starting Mechanism In Coupled-Cavity Modelocked Laser Systems,” A. I. Lobad, P. J. Rodney, S. M. Mehta, B. C. Tousley, and P. M. Fauchet, IEEE J. Quantum Electron. 30, 812–817 (1994).

139. “Second Harmonic Generation In p-Type Quantum Wells,” Z. Xu, P. M. Fauchet, G. W. Wicks, M. J. Shaw, M. Jaros, B. Richman, and C. Rella, in Quantum Well Intersubband Transition Physics and Devices, edited by H. C. Liu, B. F. Levine, and J. Y. Andersson, NATO ASI Series E: Applied Sciences, Vol. 270 (Kluwer Academic Publishers, Dordrecht, 1994), pp. 457–466.

138. “The Starting Mechanism In Coupled-Cavity, Mode-Locked Laser Systems,” A. I. Lobad, P. J. Rodney, B. C. Tousley, S. M. Mehta, and P. M. Fauchet, in Generation, Amplification, and Measurement of Ultrashort Laser Pulses, edited by R. P. Trebino and I. A. Walmsley (SPIE, Bellingham, WA, 1994), Vol. 2116, pp. 109–117 (Invited)

137. “Femtosecond Carrier Dynamics In Low-Temperature-Grown III-V Seminconductors,” Y. Kostoulas, T. Gong, B. C. Tousley, G. W. Wicks, P. Cooke, and P. M. Fauchet, in Ultrafast Phenomena in Semiconductors, edited by D. K. Ferry and H. M. van Driel (SPIE, Bellingham, WA, 1994), Vol. 2142, pp. 100–109 (Invited)

136. “Investigation Of Carrier-Carrier Scattering By Three-Pulse Pump-Probe Spectroscopy,” Y. Kostoulas, T. Gong, and P. M. Fauchet, Semicond. Sci. Technol. 9, 462–464 (1994).

135. “Hot Carrier Dynamics Near The Fermi Edge Of n-Doped GaAs,” T. Gong, J. F. Young, G. W. Wicks, P. J. Kelly, and P. M. Fauchet, Semicond. Sci. Technol. 9, 459–461 (1994).

134. “Carrier-Carrier Scattering Within Athermal Distributions,” J. F. Young, T. Gong, P. J. Kelly, and P. M. Fauchet, Semicond. Sci. & Technol. 9, 465-467 (1994).

133. “Prospects For Light-Emitting Diodes Made Of Porous Silicon From The Blue To Beyond 1.5 mm,” P. M. Fauchet, C. Peng, L. Tsybeskov, Ju. V. Vandyshev, A. Dubois, L. McLoud, S. P. Duttagupta, J. M. Rehm, G. L. McLendon, E. Ettedgui, Y. Gao, F. Seiferth, S. K. Kurinec, A. Raisanen, T. E. Orlowski, L. J. Brillson, and G. E. Carver, in Advanced Photonics Materials for Information Technology, edited by S. Etemad (SPIE, Bellingham, WA, 1994), Vol. 2144, pp. 34–50 (Invited).

132. “Second Harmonic Generation In p-Type GaAs Quantum Wells,” Z. Xu, J. V. Vandyshev, G. W. Wicks, P. M. Fauchet, M. J. Shaw, M. Jaros, B. Richman, C. Rella, and H. A. Schwettman, in Quantum Well and Superlattice Physics V, edited by G. H. Döhler and E. S. Koteles (SPIE, Bellingham, WA, 1994), Vol. 2139, pp. 321–330.

131. “Femtosecond Optical Response Of Y-Ba-Cu-O Films And Their Applications In Optoelectronics,” R. Sobolewski, L. Shi, T. Gong, W. Xiong, X. Weng, Y. Kostoulas, and P. M. Fauchet, in High-Temperature Superconducting Detectors: Bolometric and Nonbolometric, edited by M. Nahum and J. -C. Villegier (SPIE, Bellingham, WA, 1994), Vol. 2159, pp. 110–120 (Invited).

130. “Optical Characterization Of Light-Emitting Porous Silicon,” P. M. Fauchet, L. Tsybeskov, Ju. V. Vandyshev, A. Dubois, and C. Peng, in Spectroscopic Characterization Techniques for Semiconductor Technology V, edited by O. J. Glembocki (SPIE, Bellingham, WA, 1994), Vol. 2141, pp. 155–166 (Invited).

129. “Blue Emission In Porous Silicon: Oxygen-Related Photoluminescence,” L. Tsybeskov, Ju. V. Vandyshev, and P. M. Fauchet, Phys. Rev. B 49, 7821-7824 (1994).

128. “Nonlinear Optical Properties Of Ultranarrow p-Type GaAs Quantum Wells,” Z. Xu, J. V. Vandyshev, P. M. Fauchet, G. W. Wicks, M. J. Shaw, M. Jaros, B. Richman, and C. Rella, Mat. Res. Soc. Symp. Proc. 326, 573-578 (1994).

127. “Correlation Between Photoluminescence And Surface Species In Porous Silicon: Low-Temperature Annealing,” L. Tsybeskov and P. M. Fauchet, Appl. Phys. Lett. 64, 1983-1985 (1994).

126. “Ion Implantation Of Porous Silicon,” C. Peng, P. M. Fauchet, J. M. Rehm, G. L. McLendon, F. Seiferth, and S. K. Kurinec, Appl. Phys. Lett. 64, 1259-1261 (1994).

125. “Femtosecond Reflectivity Of 60 K Y-Ba-Cu-O Thin Films,” L. Shi, T. Gong, W. Xiong, X. Weng, Y. Kostoulas, R. Sobolewski, and P. M. Fauchet, Appl. Phys. Lett. 64, 1150–1152 (1994).

124. “Femtosecond Optical Response Of Low Temperature Grown In0.53Ga0.47As,” B. C. Tousley, S. M. Mehta, A. I. Lobad, P. J. Rodney, P. M. Fauchet and P. Cooke, J. Electron. Mater. 22, 1477 (1993).

123. “Femtosecond Optical Response Of Low Temperature Grown In.53Ga.47As,” B. C. Tousley, S. M. Mehta, A. I. Lobad, P. J. Rodney, P. M. Fauchet, and P. Cooke, in OSA Ultrafast Electronics and Optoelectronics, edited by J. Shah and U. Mishra (Optical Society of America, Washington, DC, 1993), Vol. 14, pp. 147–150.

122. “Ultrafast Optical And Optoelectronic Response Of Y-Ba-Cu-O,” T. Gong, L. X. Zheng, Y. Kostoulas, W. Xiong, W. Kula, K. B. Ucer, R. Sobolewski, and P. M. Fauchet, in OSA Proceedings on Ultrafast Electronics and Optoelectronics, edited by J. Shah and U. Mishra (Optical Society of America, Washington, DC, 1993), Vol. 14, pp. 234–237.

121. “Femtosecond Spectroscopy Of Y-Ba-Cu-O Thin Films,” T. Gong, L. X. Zheng, W. Xiong, W. Kula, R. Sobolewski, P. M. Fauchet, J. P. Zheng, H. S. Kwok, and J. R. Gavaler, in AIP Conference Proceedings 273: Sixth Annual Conference on Superconductivity and Its Applications, edited by H. S. Kwok, D. T. Shaw, and M. J. Naughton (American Institute of Physics, New York, 1993), pp. 327–335.

120. “Light-Emitting Porous Silicon After Standard Microelectronic Processing,” C. Peng, L. Tsybeskov, P. M. Fauchet, F. Seiferth, S. K. Kurinec, J. M. Rehm, and G. L. McLendon, Mat. Res. Soc. Symp. Proc. 298, 179-184 (1993).

119. “Can Oxidation And Other Treatments Help Us Understand The Nature Of Light-Emitting Porous Silicon?,” P. M. Fauchet, E. Ettedgui, A. Raisanen, L. J. Brillson, F. Seiferth, S. K. Kurinec, Y. Gao, C. Peng, and L. Tsybeskov, Mat. Res. Soc. Symp. Proc. 298, 271-276 (1993).

118. “Comparative Study Of Light-Emitting Porous Silicon Anodized With Light Assistance And In The Dark,” L. Tsybeskov, C. Peng, S. P. Duttagupta, E. Ettedgui, Y. Gao, P. M. Fauchet, and G. E. Carver, Mat. Res. Soc. Symp. Proc. 298, 307-311 (1993).

117. “Femtosecond Optical Nonlinearities In YBa2Cu3O7-x,” T. Gong, L. X. Zheng, W. Xiong, W. Kula, R. Sobolewski, and P. M. Fauchet, in Ultrafast Pulse Generation and Spectroscopy, edited by T. R. Gosnell, A. J. Taylor, K. A. Nelson, and M. C. Downer (SPIE, Bellingham, WA, 1993), Vol. 1861, pp. 355–362.

116. “Carrier-Carrier Interactions In GaAs Investigated By Femtosecond Spectroscopy,” T. Gong and P. M. Fauchet, in Ultrafast Pulse Generation and Spectroscopy, edited by T. R. Gosnell, A. J. Taylor, K. A. Nelson, and M. C. Downer (SPIE, Bellingham, WA, 1993), Vol. 1861, pp. 227–237 (Invited).

115. “Picosecond Nonlinear Optics In Semiconductor Quantum Wells With The SCA Free Electron Laser,” Z. Xu, L. X. Zheng, J. V. Vandyshev, G. W. Wicks, P. M. Fauchet, B. Richman, and C. Rella, in Free-Electron Laser Spectroscopy in Biology, Medicine, and Materials Science, edited by H. A. Schwettman (SPIE, Bellingham, WA, 1993), Vol. 1854, pp. 69-76.

114. “Femtosecond Carrier-Carrier Interactions In GaAs,” T. Gong, K. B. Ucer, L. X. Zheng, G. W. Wicks, J. F. Young, P. J. Kelly, and P. M. Fauchet, in Ultrafast Phenomena VIII, edited by J.-L. Martin, A. Migus, G. A. Mourou, and A. H. Zewail (Springer-Verlag, 1993), pp. 402–404.

113. “Femtosecond Optical Response Of Y-Ba-Cu-O Thin Films: The Dependence On Optical Frequency, Excitation Intensity, And Electric Current,” T. Gong, L. X. Zheng, W. Xiong, W. Kula, Y. Kostoulas, R. Sobolewski, and P. M. Fauchet, Phys. Rev. B 47, 14,495–14,502 (1993).

112. “High Spatial Resolution Mapping Of Porous Silicon,” E. Ettedgui, C. Peng, L. Tsybeskov, Y. Gao, P. M. Fauchet, G. E. Carver, and H. A. Mizes, Mat. Res. Soc. Symp. Proc. 283, 173-178 (1993).

111. “Luminescence Properties Of Porous Silicon,” C. Peng, L. Tsybeskov, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 283, 121-126 (1993).

110. “Subpicosecond Hot-Hole Dynamics In Highly Excited GaAs,” T. Gong, P. M. Fauchet, J. F. Young, and P. J. Kelly, Appl. Phys. Lett. 62, 522–524 (1993).

109. “Free Carrier Lifetime In a-Si, Ge:H Alloys,” D. A. Young, P. M. Fauchet, Y. M. Liu, W. L. Nighan, Jr., and C. M. Fortmann, Mat. Res. Soc. Symp. Proc. 258, 807 (1992).

108. “The Extended State Mobility In Amorphous Silicon Alloys,” P. M. Fauchet, R. Vanderhaghen, A. Mourchid, and D. Hulin, Mat. Res. Soc. Symp. Proc. 258, 711 (1992).

107. “Ultrafast Thermal Nonlinearities In Amorphous Silicon,” P. M. Fauchet, D. Hulin, A. Mourchid, and R. Vanderhaghen, in Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors and High-Temperature Superconductors, edited by R. R. Alfano (SPIE, Bellingham, WA, 1992), Vol. 1677, pp. 174–183.

106. “Femtosecond Dynamics Of Hot Carriers In GaAs,” P. M. Fauchet and T. Gong, in Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors and High-Temperature Superconductors, edited by R. R. Alfano (SPIE, Bellingham, WA, 1992), Vol. 1677, pp. 25–34. (Invited)

105. “Picosecond Spectroscopy In Solids With FEL’s,” P. M. Fauchet, in Spectroscopic Characterization Techniques for Semiconductor Technology IV, edited by O. J. Glembocki (SPIE, Bellingham, WA, 1992), Vol. 1678, p. 232. (Invited)

104. “Ultrafast Electronic And Thermal Processes In Hydrogenated Amorphous Silicon,” D. Hulin, P. M. Fauchet, R. Vanderhaghen, A. Mourchid, W. L. Nighan, Jr., J. Paye, and A. Antonetti, in Ultrafast Processes in Spectroscopy 1991, edited by A. Laubereau and A. Seilmeier, Institute of Physics Conference Series No. 126 (IOP Publishing Ltd., Bristol, England, 1992), p. 293. (Invited)

103. “Femtosecond Nonlinearities And Hot-Carrier Dynamics In GaAs,” T. Gong and P. M. Fauchet, in Ultrafast Processes in Spectroscopy 1991, edited by A. Laubereau and A. Seilmeier, Institute of Physics Conference Series No. 126 (IOP Publishing Ltd., Bristol, England, 1992), pp. 317–324. (Invited)

102. “Applied Optical Diagnostics In Semiconductors,” P. M. Fauchet, Proc. IEEE 80, 420–435 (1992). (Invited)

101. “Hot Carrier Relaxation And Recombination In Amorphous Semiconductors,” A. Mourchid, D. Hulin, R. Vanderhaghen, and P. M. Fauchet, Semicond. Sci. & Technol. 7, B302 (1992).

100. “Femtosecond Gain Dynamics In Thin GaAs Films,” P. M. Fauchet, T. Gong, P. J. Kelly, and J. F. Young, Semicond. Sci. & Technol. 7, B164–B166 (1992).

99. “The Properties Of Free Carriers In Amorphous Silicon,” P. M. Fauchet, D. Hulin, R. Vanderhaghen, A. Mourchid, and W. L. Nighan, Jr., J. Non-Cryst. Solids 141, 76 (1992). (Invited)

98. “The Raman Line Shape Of Semiconductor Nanocrystals,” P. M. Fauchet, in Light Scattering in Semiconductor Structures and Superlattices, D. J. Lockwood and J. F. Young, editors (Plenum, New York, 1991), pp. 229–245. (Invited)

97. “Crystallization Of a-Si:H With CW And Pulsed Lasers,” P. M. Fauchet and I. H. Campbell, J. Non-Cryst. Solids 137 & 138, 729–732 (1991).

96. “Femtosecond Thermalization Processes In a-Si:H,” D. Hulin, A. Mourchid, P. M. Fauchet, W. L. Nighan, Jr., and R. Vanderhaghen, J. Non-Cryst. Solids 137 & 138, 527–530 (1991).

95. “The Mechanism Of Subnanosecond Carrier Recombination In a-Si:H,” R. Vanderhaghen, A. Mourchid, D. Hulin, D. A. Young, W. L. Nighan, Jr., and P. M. Fauchet, J. Non-Cryst. Solids 137 & 138, 543–546 (1991).

94. “Picosecond Carrier Dynamics In a-Si0.5Ge0.5:H Measured With A Free Electron Laser,” P. M. Fauchet, D. A. Young, W. L. Nighan, Jr., and C. M. Fortmann, IEEE J. Quantum Electron. 27, 2714–2717 (1991).

93. “Femtosecond Refractive And Absorptive Nonlinearities Due To Real Carriers In GaAs,” T. Gong and P. M. Fauchet, in OSA Proceedings on Picosecond Electronics and Optoelectronics, edited by T. C. L. G. Sollner and J. Shah (Optical Society of America, Washington, DC, 1991), Vol. 9, pp. 253–259.

92. “Femtosecond Gain Dynamics Due To Initial Thermalization Of Hot Carriers Injected At 2 eV In GaAs,” T. Gong, P. M. Fauchet, J. F. Young, and P. J. Kelly, Phys. Rev. B 44, 6542–6545 (1991).

91. “Femtosecond Refractive-Index Spectral Hole Burning In Intrinsic And Doped GaAs,” T. Gong, P. Mertz, W. L. Nighan, Jr., and P. M. Fauchet, Appl. Phys. Lett. 59, 721–723 (1991).

90. “Temporal Reshaping Of Ultrashort Laser Pulses Reflected By GaAs,” I. H. Campbell, S. K. Kirby and P. M. Fauchet, in Photonics: Nonlinear Optics and Ultrafast Phenomena, edited by R. R. Alfano and L. Rothberg (Nova Science, New York, 1991), pp. 165–169.

89. “Control Of Solitons In A Femtosecond Dye Laser,” W. L. Nighan Jr., T. Gong, and P. M. Fauchet, in Photonics: Nonlinear Optics and Ultrafast Phenomena, edited by R. R. Alfano and L. Rothberg (Nova Science, New York, 1991), pp. 153–157.

88. “High-Efficiency High-Energy Optical Amplifier For Femtosecond Pulses,” W. L. Nighan, Jr. and P. M. Fauchet, in Applications of Ultrashort Laser Pulses in Science and Technology (SPIE, Bellingham, WA, 1990), Vol. 1268, p. 79.

87. “Generation Of Solitons, Periodic Pulsing, And Nonlinearities In The CPM Dye Laser,” P. M. Fauchet, W. L. Nighan, Jr., and T. Gong, in Applications of Ultrashort Laser Pulses in Science and Technology (SPIE, Bellingham, WA, 1990), Vol. 1268, p. 88.

86. “Ultrafast Relaxation Dynamics Of Photoexcited Carriers In GaAs,” T. Gong, W. L. Nighan, Jr., and P. M. Fauchet, in Applications of Ultrashort Laser Pulses in Science and Technology (SPIE, Bellingham, WA, 1990), Vol. 1268, p. 106.

85. “Hot Carrier Coulomb Effects In GaAs Investigated By Femtosecond Spectroscopy Around The Band Edge,” T. Gong, W. L. Nighan, Jr., and P. M. Fauchet, Appl. Phys. Lett. 57, 2713-2715 (1990).

84. “Ultrafast Scattering Times In Amorphous Silicon,” D. Hulin, A. Mourchid, R. Vanderhaghen, and P. M. Fauchet, in Ultrafast Phenomena VII, C. B. Harris, E. P. Ippen, G. A. Mourou, and A. H. Zewail, editors (Springer-Verlag, 1990), pp. 282–284.

83. “Femtosecond Energy Transfer In a-Si:H,” A. Mourchid, R. Vanderhaghen, D. Hulin, and P. M. Fauchet, Phys. Rev. B 42, 7667-7670 (1990).

82. “CW Laser Irradiation Of GaAs: Arsenic Formation And Photoluminescence Degradation,” I. H. Campbell and P. M. Fauchet, Appl. Phys. Lett. 57, 10-12 (1990).

81. “Mechanism Of The Growth Of Amorphous And Microcrystalline Silicon From Silicon Tetrafluoride And Hydrogen,” Y. Okada, J. Chen, I. H. Campbell, P. M. Fauchet, and S. Wagner, J. Appl. Phys. 67, 1757 (1990).

80. “The Effect Of Hydrogen On The Structure And Electro-Optical Properties Of Silicon-Germanium Alloys,” C. M. Fortmann, D. E. Albright, I. H. Campbell, and P. M. Fauchet, Mat. Res. Soc. Symp. Proc. 164, 315 (1990).

79. “Critical Review Of Raman Spectroscopy As A Diagnostic Tool For Semiconductor Nanocrystals,” P. M. Fauchet and I. H. Campbell, Mat. Res. Soc. Symp. Proc. 164, 259 (1990).

78. “Opto-Electronic Properties Of µc-Si Grown From SiF4 And H2 By PECVD,” Y. Okada, I. H. Campbell, P. M. Fauchet, and S. Wagner, Mat. Res. Soc. Symp. Proc. 164, 15 (1990).

77. “Femtosecond Spectroscopic Determination Of The Properties Of Free Carriers In a-Si:H,” A. Mourchid, D. Hulin, C. Tanguy, R. Vanderhaghen, W. L. Nighan, Jr., K. Gzara, and P. M. Fauchet, Solid State Commun. 74, 1197 (1990).

76. “Photoluminescence Above The Tauc Gap In a-Si:H,” I. H. Campbell, P. M. Fauchet, S. A. Lyon, and R. J. Nemanich, Phys. Rev. B 41, 9871 (1990).

75. “Bulk And Surface Properties Of Amorphous Hydrogenated Fluorinated Silicon Grown From SiF4 And H2,” A. Maruyama, D. Shen, V. Chu, J. Z. Liu, I. Campbell, P. M. Fauchet, and S. Wagner, IEEE Trans. Electron Devices ED‑36, 2853 (1989).

74. “Mechanism Of Microcrystalline Silicon Growth From Silicon Tetrafluoride And Hydrogen,” Y. Okada, J. Chen, I. H. Campbell, P. M. Fauchet, and S. Wagner, J. Non-Cryst. Solids 114, 816 (1989).

73. “Extended State Mobility In a-Si:H Measured By Femtosecond Spectroscopy,” P. M. Fauchet, A. Mourchid, D. Hulin, C. Tanguy, and R. Vanderhaghen, J. Non-Cryst. Solids 114, 564 (1989).

72. “Temperature Dependence Of H Radical Etching In The Deposition Of Microcrystalline Silicon Alloy Thin Films By Hg-Sensitized Photo-CVD,” N. Saxena, D. E. Albright, C. M. Fortmann, T. W. F. Russell, P. M. Fauchet, and I. H. Campbell, J. Non-Cryst. Solids 114, 801 (1989).

71. “Femtosecond Optical Spectroscopy In a-Si:H And Its Alloys,” A. Mourchid, D. Hulin, C. Tanguy, R. Vanderhaghen, and P. M. Fauchet, J. Non-Cryst. Solids 114, 582 (1989).

70. “Luminescence Above The Tauc Gap In a-Si:H,” P. M. Fauchet, I. H. Campbell, S. A. Lyon, and R. J. Nemanich, J. Non-Cryst. Solids 114, 277 (1989).

69. “Solitons And Related Periodic Pulse Evolutions In A Femtosecond Dye Laser,” W. L. Nighan, Jr., T. Gong, and P. M. Fauchet, IEEE J. Quantum Electron. QE‑25, 2476 (1989).

68. “a-Si And µc‑Si Grown From SiF4 With High H2 Dilution In A DC Glow Discharge,” Y. Okada, J. Chen, I. H. Campbell, P. M. Fauchet, and S. Wagner, Mat. Res. Soc. Symp. Proc. 149, 93 (1989).

67. “Ultrafast Electronic And Structural Processes In Highly Excited Crystalline And Non-Crystalline Silicon,” P. M. Fauchet, Opt. Eng. 28, 1096 (1989). (Invited)

66. “Optical, Electrical And Structural Properties Of Composite Films Made Of Si, Ge And C,” P. M. Fauchet and I. H. Campbell, in Raman Scattering, Luminescence and Spectroscopic Instrumentation in Technology (SPIE, Bellingham, WA, 1989), Vol. 1055, p. 204.

65. “Surface Condition In The Plasma-CVD Of a-Si:H,F From SiF4 And H2,” A. Maruyama, D. S. Shen, V. Chu, J. Z. Liu, J. Jaroker, I. H. Campbell, P. M. Fauchet, and S. Wagner, Mat. Res. Soc. Symp. Proc. 131, 203 (1989).

64. “Generation And Control Of Solitons And Solitonlike Pulses In A Femtosecond Ring Dye Laser,” W. L. Nighan, Jr., T. Gong, and P. M. Fauchet, Opt. Lett. 14, 447 (1989).

63. “Ultrafast Carrier Relaxation In Hydrogenated Amorphous Silicon,” P. M. Fauchet and D. Hulin, J. Opt. Soc. Am. B 6, 1024 (1989).

62. “Enhanced Sensitivity Of Time-Resolved Reflectivity Measurements Near Brewster’s Angle,” P. M. Fauchet, IEEE J. Quantum Electron. QE-25, 1072 (1989).

61. “Self-Diffraction: A New Method For Characterization Of Ultrashort Laser Pulses,” W. L. Nighan, Jr., T. Gong, L. Liou, and P. M. Fauchet, Opt. Commun. 69, 339 (1989).

60. “Properties Of p+ Microcrystalline Films Of SiC:H Deposited By Conventional RF Glow Discharge,” B. Goldstein, C. R. Dickson, I. H. Campbell, and P. M. Fauchet, Appl. Phys. Lett. 53, 2672 (1988).

59. “Control And Characterization Of Soliton-Like Pulses In A Femtosecond Dye Laser,” W. L. Nighan, Jr., T. Gong, and P. M. Fauchet, in Ultrafast Phenomena VI, T. Yajima, K. Yoshihara, C. B. Harris, and S. Shionoya, editors (Springer-Verlag, 1988), pp. 109–111.

58. “Free Carrier And Temperature Effects In Amorphous Silicon Thin Films,” C. Tanguy, D. Hulin, A. Mourchid, P. M. Fauchet, and S. Wagner, Appl. Phys. Lett. 53, 880 (1988).

57. “The Nature Of Residual Stress, Defects, And Device Characteristics For Thick Single-Crystalline Si Films On Oxidized Si Wafers,” L. E. Trimble, G. K. Celler, D. G. Schimmel, C. Y. Lu, S. Nakahara, and P. M. Fauchet, J. Mater. Res. 3, 514 (1988).

56. “Electrical, Optical And Structural Properties Of p+ Microcrystalline SiC:H Layers Deposited By RF Glow Discharge,” B. Goldstein, C. R. Dickson, I. H. Campbell, and P. M. Fauchet, in Proc. 8th European Communities Photovoltaic Solar Energy Conference, I. Solomon, B. Equer, and P. Helm, editors (Kluwer, 1988), pp. 969–975.

55. “Temporal Reshaping Of Ultrashort Laser Pulses After Reflection From GaAs At Brewster’s Angle,” I. H. Campbell and P. M. Fauchet, Opt. Lett. 13, 634 (1988).

54. “Determination Of Carrier-Carrier And Carrier-Phonon Relaxation Times From Ultrafast Photoinduced Absorption In Amorphous Semiconductors,” P. M. Fauchet and K. Gzara, Phys. Stat. Sol. (b) 148, K71 (1988).

53. “Hot Carrier Dynamics In Amorphous Semiconductors,” P. M. Fauchet, K. Gzara, I. H. Campbell, D. Hulin, C. Tanguy, A. Mourchid, and A. Antonetti, in Ultrafast Laser Probe Phenomena in Bulk and Microstructure Semiconductors II, R. R. Alfano, editor (SPIE, Bellingham, WA, 1988), Vol. 942, pp. 92–98.

52. “Optical Techniques For In-situ, Real Time Detection Of Laser Damage,” P. M. Fauchet and I. H. Campbell, in Laser Optics for Intracavity and Extracavity Applications, P. M. Fauchet and K. H. Guenther, editors (SPIE, Bellingham, WA, 1988), Vol. 895, pp. 210–217.

51. “Optical And Electronic Properties Of An Amorphous Silicon-Germanium Alloy With A 1.28 eV Optical Gap,” J. Kolodzey, R. Schwarz, S. Aljishi, V. Chu, D.-S. Shen, P. M. Fauchet, and S. Wagner, Appl. Phys. Lett. 52, 477 (1988).

50. “Picosecond Optical Determination Of Carrier Lifetime In Polysilicon Films,” N. K. Bambha, W. L. Nighan, Jr., I. H. Campbell, P. M. Fauchet, and N. M. Johnson, Mat. Res. Soc. Symp. Proc. 106, 323 (1988).

49. “Picosecond Laser Induced Melting: The Dielectric Function Of Molten Silicon And Superheating In The Liquid Phase,” P. M. Fauchet and K. D. Li, Mat. Res. Soc. Symp. Proc. 100, 477 (1988).

48. “Trapping Time In Processed Polycrystalline Silicon Measured By Picosecond Time-Resolved Reflectivity,” N. K. Bambha, W. L. Nighan, Jr., I. H. Campbell, P. M. Fauchet, and N. M. Johnson, J. Appl. Phys. 63, 2316 (1988).

47. “Raman Spectroscopy In Low-Dimensional Semiconductors,” P. M. Fauchet and I. H. Campbell, CRC Critical Reviews in Solid State and Materials Sciences 14, S79-S101 (1988). (Invited)

46. “Detection Of Laser Damage By Raman Microscopy,” P. M. Fauchet, I. H. Campbell, and F. Adar, in NBS Special Publication 746, H. E. Bennett et al., editors (U.S. Government Printing Office, 1988), pp. 388–394.

45. “The Dielectric Function Of Laser-Produced Molten Silicon,” P. M. Fauchet and K. D. Li, J. Non-Cryst. Solids 97 & 98, 1267 (1987).

44. “Femtosecond Spectroscopy In Amorphous Silicon And Silicon-Germanium Alloys,” P. M. Fauchet, D. Hulin, A. Migus, A. Antonetti, J. P. Conde, and S. Wagner, J. Non-Cryst. Solids 97 & 98, 145 (1987).

43. “Drude Parameters Of Liquid Silicon At The Melting Temperature,” K. D. Li and P. M. Fauchet, Appl. Phys. Lett. 51, 1747 (1987).

42. “High Spatial Resolution Analysis Of Semiconductor Thin Films With A Raman Microprobe,” P. M. Fauchet, in Microbeam Analysis - 1987, R. H. Geiss, editor (San Francisco Press, 1987), pp. 144–146.

41. “Structural Properties Of Heteroepitaxial Semiconductor Islands By Raman Microscopy,” P. M. Fauchet, I. H. Campbell, M. A. Awal, and E.-H. Lee, International Conference on Raman and Luminescence Spectroscopy in Technology, J. E. Griffiths and F. Adar, editors, SPIE Proc. 822, 25–30 (1987).

40. “Raman Microprobe Study Of Si And Ge On Insulator,” I. H. Campbell, P. M. Fauchet, E.‑H. Lee, and M. A. Awal, Thin Solid Films 154, 249 (1987).

39. “Raman Microscopy Of Semiconductor Films,” P. M. Fauchet and I. H. Campbell, in Modern Optical Characterization Techniques for Semiconductors and Semiconductor Devices, O. J. Glembocki, F. H. Pollak, and J. Song, editors (SPIE, Bellingham, WA, 1987), Vol. 794, pp. 167–169.

38. “The Structure Of a-Si:H,F/a-Si,Ge:H,F Interfaces,” J. P. Conde, D.-S. Shen, I. H. Campbell, P. M. Fauchet, and S. Wagner, in Interfaces, Superlattices and Thin Films, J. D. Dow and I. K. Schuller, editors (Materials Research Society, 1987), pp. 629–634.

37. “Picosecond Determination Of The Dielectric Function Of Liquid Silicon At 1064 nm,” K. D. Li and P. M. Fauchet, Solid State Commun. 61, 207 (1987).

36. “The Raman Spectrum Of Semiconductor Nanograins,” I. H. Campbell and P. M. Fauchet, Proceedings of the 18th International Conference on the Physics of Semiconductors, O. Engstrom, editor (World Scientific, 1987), pp. 1357–1360.

35. “Femtosecond Spectroscopy In a-Si:H,” P. M. Fauchet, D. Hulin, A. Migus, A. Antonetti, J. Kolodzey, and S. Wagner, Proceedings of the 18th International Conference on the Physics of Semiconductors, O. Engstrom, editor (World Scientific, 1987), pp. 1029–1032.

34. “Initial Stages Of Trapping In a-Si:H Observed By Femtosecond Spectroscopy,” P. M. Fauchet, D. Hulin, A. Migus, A. Antonetti, J. Kolodzey, and S. Wagner, Phys. Rev. Lett. 57, 2438 (1986).

33. “Carrier Scattering At Periodic a-Si:H,F Barriers In Si,Ge:H,F Alloys,” J. Kolodzey, R. Schwarz, S. Aljishi, D.-S. Shen, I. Campbell, P. M. Fauchet, S. A. Lyon, and S. Wagner, Superlattices and Microstructures 2, 391 (1986).

32. “Femtosecond Spectroscopy Of Hot Carriers In Germanium,” P. M. Fauchet, D. Hulin, G. Hamoniaux, A. Orszag, J. Kolodzey, and S. Wagner, in Ultrafast Phenomena V, G. R. Fleming and A. E. Siegman, editors (Springer-Verlag, 1986), pp. 248–250.

31. “Mapping Solid Surfaces With A Raman Microprobe,” P. M. Fauchet, Scanning Electron Micros., 1986, II, 425 (1986).

30. “Microcrystallinity In a-Si,Ge:H,F Alloys,” D. S. Shen, J. Kolodzey, D. Slobodin, J. P. Conde, C. Lane, I. H. Campbell, P. M. Fauchet, and S. Wagner, in Materials Issues in Amorphous Semiconductor Technology, D. Adler, Y. Hamakawa, and A. Madan, editors (Materials Research Society, 1986), pp. 301–306.

29. “Stimulated Wood’s Anomalies On Laser-Illuminated Surfaces,” A. E. Siegman and P. M. Fauchet, IEEE J. Quantum Electron QE-22, 1384 (1986). (Invited)

28. “The Effects Of Microcrystal Size And Shape On The One Phonon Raman Spectra Of Crystalline Semiconductors,” I. H. Campbell and P .M. Fauchet, Solid State Commun. 58, 739 (1986).

27. “Recombination Mechanisms In Si And Si Thin Films Determined By Picosecond Reflectivity Measurements Near Brewster’s Angle,” P. M. Fauchet and W. L. Nighan, Jr., Appl. Phys. Lett. 48, 721(1986).

26. “Properties Of Thin Films After Focused Beam Processing,” I. H. Campbell, F. Adar, and P. M. Fauchet, in Semiconductor-on-Insulator and Thin Film Transistor Technology, A. Chiang, M. W. Geis, and L. Pfeiffer, editors (Materials Research Society, 1986), pp. 311–316.

25. “Raman Microprobe Analysis Of Laser-Induced Microstructures,” P. M. Fauchet, in Beam-Solid Interactions and Phase Transformations, H. Kurz, G. L. Olson, and J. M. Poate, editors (Materials Research Society, 1986), pp. 149–154.

24. “Characterization Of Ultrashort Laser Pulses By The Method Of Self-Diffraction,” P. M. Fauchet, W. L. Nighan, Jr., and R. Trebino, American Institute of Physics Conf. Proc. 146, 588 (1986).

23. “Raman Microscopy Of Solid Surfaces After Laser Irradiation,” P. M. Fauchet, I. H. Campbell, and F. Adar, American Institute of Physics Conf. Proc. 146, 730 (1986).

22. “Properties Of Gratings Written With A Single Laser Beam,” P. M. Fauchet, American Institute of Physics Conf. Proc. 146, 739 (1986). (Invited)

21. “The Raman Microprobe: A Quantitative Analytical Tool To Characterize Laser-Processed Semiconductors,” P. M. Fauchet, IEEE Circuits and Devices Magazine 2, 37 (1986). (Invited)

20. “Surface Damage Mechanisms In Nontransparent Media,” P. M. Fauchet and A. E. Siegman, in NBS Special Publications 727, H. E. Bennett, A. H. Guenter, D. Milam, and B. E. Newnam, editors (U.S. Government Printing Office, 1986), pp. 147–153.

19. “Transport Properties Of a-Si, Ge:H Alloys Prepared From SiF4 And H2 In R.F. Or D.C. Glow Discharges,” J. Kolodzey, D. Slobodin, S. Aljishi, S. Quinlan, R. Schwarz, D. S. Shen, P. M. Fauchet, and S. Wagner, J. Non-Cryst. Solids 77 & 78, 897 (1985).

18. “Long Range Material Relaxation After Localized Laser Damage,” P. M. Fauchet, I. H. Campbell, and F. Adar, Appl. Phys. Lett. 47, 479 (1985).

17. “Raman Microprobe Study Of Changes Induced By A Pulsed Laser,” F. Adar, I. H. Campbell, and P. M. Fauchet, in Microbeam Analysis - 1985, J. T. Armstrong, editor (San Francisco Press, 1985), pp. 53–56.

16. “Micro-Raman Study Of Laser-Induced Damage,” P. M. Fauchet, I. H. Campbell, and F. Adar, in NBS Special Publication 697, A. Feldman, editor (U.S. Government Printing Office, 1985), pp. 198–201.

15. “Laser-Induced Surface Ripples: What Is Understood And What Is Not,” P. M. Fauchet and A. E. Siegman, in Energy Beam-Solid Interactions and Transient Thermal Processing l984, Biegelsen, Rozgonyi, and Shank, editors (Materials Research Society, 1985), pp. 199–204.

14. “Ultrafast Spectroscopy Of Very Dense And Hot Electron Hole Plasmas In Crystalline And Amorphized Semiconductors,” P. M. Fauchet and A. E. Siegman, in the Proceedings of the 17th International Conference on the Physics of Semiconductors, Chadi and Harrison, editors (Springer-Verlag, 1985), pp. 1501–1504.

13. “Picosecond Dynamics Of Electron-Hole Plasmas Close To The Melting Phase Transition In Silicon And Gallium Arsenide,” P. M. Fauchet and A. E. Siegman, in the Proceedings of the International Conference on Lasers ’83, Powell, editor (STS Press, 1985), pp. 38–44.

12. “Picosecond Dynamics Of Dense Hot Electron-Hole Plasmas In Crystalline And Amorphized Si And GaAs,” P. M. Fauchet and A. E. Siegman, in Ultrafast Phenomena IV, Auston and Eisenthal, editors (Springer-Verlag, 1984), pp. 129–132.

11. “Two-Color Picosecond Measurements On Electron-Hole Plasmas Close To The Melting Phase Transition,” P. M. Fauchet and A. E. Siegman, in Energy Beam-Solid Interactions and Transient Thermal Processing, Fan and Johnson, editors (North-Holland, 1984), pp. 63–68.

10. “Evidence For A Dense Electron-Hole Plasma Close To The Melting Phase Transition In Silicon,” P. M. Fauchet and A. E. Siegman, Appl. Phys. Lett. 43, 1043 (1983).

9. “Observations Of Higher-Order Laser-Induced Surface Ripples On <111> Germanium,” P. M. Fauchet and A. E. Siegman, Appl. Phys. A 32, 135 (1983).

8. “Picosecond Laser-Induced Surface Transitions In Solids,” P. M. Fauchet, Zhou Guosheng, and A. E. Siegman, in Laser-Solid Interactions and Transient Thermal Processing of Materials, Narayan, Brown, and Lemons, editors (North-Holland, 1983), pp. 205–210.

7. “Gradual Surface Transitions On Semiconductors Induced By Multiple Picosecond Laser Pulses,” P. M. Fauchet, Phys. Lett. A 93, 155 (1983).

6. “Growth Of Periodic Surface Structures On Solids During Laser Illumination,” Zhou Guosheng, P. M. Fauchet, and A. E. Siegman, Phys. Rev. B 26, 5366 (1982).

5. “Periodic Ripple Structure On Semiconductors Under Picosecond Pulse Illumination,” P. M. Fauchet, Zhou Guosheng, and A. E. Siegman, in Picosecond Phenomena III, Eisenthal et al., editors (Springer-Verlag, 1982), pp. 376–379.

4. “Surface Ripples On Silicon And Gallium Arsenide Under Picosecond Laser Illumination,” P. M. Fauchet and A. E. Siegman, Appl. Phys. Lett. 40, 824 (1982).

3. “The Auger Rate In Highly Excited Indium Antimonide,” P. M. Fauchet, Phys. Stat. Sol. (b) 110, K11 (1982).

2. “Nonlinear Transmission Of Picosecond 10.6 Microns Pulses In InSb,” B. D. Schwartz, P. M. Fauchet, and A. V. Nurmikko, Opt. Lett. 5, 371 (1980).

1.   “Optical Probing Of Auger-Governed Decay Of Laser Induced Plasma In InSb,” P. M. Fauchet, Phys. Stat. Sol. (a) 58, K211(1980).